Datasheet HMC8120 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | 71 GHz to 76 GHz, E-Band Variable Gain Amplifier |
| Páginas / Página | 16 / 1 — 71 GHz to 76 GHz,. E-Band Variable Gain Amplifier. Data Sheet. HMC8120. … |
| Revisión | A |
| Formato / tamaño de archivo | PDF / 362 Kb |
| Idioma del documento | Inglés |
71 GHz to 76 GHz,. E-Band Variable Gain Amplifier. Data Sheet. HMC8120. FEATURES. GENERAL DESCRIPTION. Gain: 22 dB typical
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71 GHz to 76 GHz, E-Band Variable Gain Amplifier Data Sheet HMC8120 FEATURES GENERAL DESCRIPTION Gain: 22 dB typical
The HMC8120 is an integrated E-band, gallium arsenide (GaAs),
Wide gain control range: 15 dB typical
pseudomorphic (pHEMT), monolithic microwave integrated
Output third-order intercept (OIP3): 30 dBm typical
circuit (MMIC), variable gain amplifier and/or driver amplifier
Output power for 1 dB compression (P1dB): 21 dBm typical
that operates from 71 GHz to 76 GHz. The HMC8120 provides up
Saturated output power (PSAT): 22 dBm typical
to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and
DC supply: 4 V at 250 mA
22 dBm of PSAT while requiring only 250 mA from a 4 V power
No external matching required
supply. Two gain control voltages (VCTL1 and VCTL2) are provided
Die size: 3.599 mm × 1.369 mm × 0.05 mm
to allow up to 15 dB of variable gain control. The HMC8120
APPLICATIONS
exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio
E-band communication systems
systems. All data is taken with the chip in a 50 Ω test fixture
High capacity wireless backhaul radio systems
connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon
Test and measurement
on each port.
FUNCTIONAL BLOCK DIAGRAM IN RF 1 2 3 HMC8120 4 5 RFOUT 1.6kΩ 1.6kΩ 6 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 1 2 GG2 DD1 DD2 DET CTL CTL GG3 DD3 GG4 DD4 GG5 DD5 GG6 DD6 REF DET /V V V V V V V V V V V V V V
1
1 V V
00
EN
50-
GGV
131 Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
The HMC8120 is an integrated E-band, gallium arsenide (GaAs),
Wide gain control range: 15 dB typical
pseudomorphic (pHEMT), monolithic microwave integrated
Output third-order intercept (OIP3): 30 dBm typical
circuit (MMIC), variable gain amplifier and/or driver amplifier
Output power for 1 dB compression (P1dB): 21 dBm typical
that operates from 71 GHz to 76 GHz. The HMC8120 provides up
Saturated output power (PSAT): 22 dBm typical
to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and
DC supply: 4 V at 250 mA
22 dBm of PSAT while requiring only 250 mA from a 4 V power
No external matching required
supply. Two gain control voltages (VCTL1 and VCTL2) are provided
Die size: 3.599 mm × 1.369 mm × 0.05 mm
to allow up to 15 dB of variable gain control. The HMC8120
APPLICATIONS
exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio
E-band communication systems
systems. All data is taken with the chip in a 50 Ω test fixture
High capacity wireless backhaul radio systems
connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon
Test and measurement
on each port.
FUNCTIONAL BLOCK DIAGRAM IN RF 1 2 3 HMC8120 4 5 RFOUT 1.6kΩ 1.6kΩ 6 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 1 2 GG2 DD1 DD2 DET CTL CTL GG3 DD3 GG4 DD4 GG5 DD5 GG6 DD6 REF DET /V V V V V V V V V V V V V V
1
1 V V
00
EN
50-
GGV
131 Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE