Datasheet ADR441-EP (Analog Devices)
Fabricante | Analog Devices |
Descripción | Ultralow Noise, LDO XFET® 2.5V Voltage Reference w/Current Sink and Source |
Páginas / Página | 8 / 1 — Ultralow Noise, LDO XFET Voltage. Reference with Current Sink and Source. … |
Formato / tamaño de archivo | PDF / 160 Kb |
Idioma del documento | Inglés |
Ultralow Noise, LDO XFET Voltage. Reference with Current Sink and Source. Enhanced Product. ADR441-EP. FEATURES
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Ultralow Noise, LDO XFET Voltage Reference with Current Sink and Source Enhanced Product ADR441-EP FEATURES TYPICAL APPLICATION CIRCUIT Ultralow voltage noise (0.1 Hz to 10 Hz): 1.2 µV p-p Superb temperature drift: 5 ppm/°C DNC 1 8 DNC Low dropout operation (supply voltage headroom): 500 mV V ADR441-EP IN 2 7 NIC + TOP VIEW Supply voltage operating range: 3 V to 18 V V (Not to Scale) OUT 10µF 0.1µF NIC 3 6 High output source and sink current GND 0.1µF 4 5 TRIM +10 mA and −5 mA, respectively NOTES ENHANCED PRODUCT FEATURES 1. NIC = NOT INTERNALLY CONNECTED.
001
THIS PIN IS NOT CONNECTED INTERNALLY. 2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. Supports defense and aerospace applications (AQEC
17030- Figure 1.
standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request APPLICATIONS Precision data acquisition systems High resolution data converters Battery-powered instrumentation Precision instruments Military communication Unmanned systems Avionics GENERAL DESCRIPTION
The ADR441-EP1 is a XFET® voltage reference featuring The ADR441-EP has the capability to source up to +10 mA of ultralow noise, high accuracy, and low temperature drift output current and sink up to −5 mA. The device also comes performance. Using Analog Devices, Inc., temperature drift with a trim terminal to adjust the output voltage over a 0.5% curvature correction and extra implanted junction FET (XFET) range without compromising performance. technology, voltage change vs. temperature nonlinearity in the The ADR441-EP is available in an 8-lead, narrow SOIC package. ADR441-EP is greatly minimized. The ADR441-EP is specified over the military temperature range The XFET reference offers better noise performance than buried of −55°C to +125°C. Additional application and technical Zener references, and the XFET reference operates off information can be found in the ADR441 data sheet. low supply voltage headroom (500 mV). This combination of features makes the ADR441-EP ideally suited for precision signal conversion applications in high end data acquisition systems, military communication, and avionics applications. 1 Protected by U.S. Patent Number 5,838,192.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS TYPICAL APPLICATION CIRCUIT GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE