Datasheet IM231-M6S1B / IM231-M6T2B (Infineon) - 10
| Fabricante | Infineon |
| Descripción | 600 V three-phase Intelligent Power Module |
| Páginas / Página | 24 / 10 — CIPOS™ Micro. IM231-M6S1B / IM231-M6T2B. Static Parameters. 6.1. … |
| Revisión | 02_00 |
| Formato / tamaño de archivo | PDF / 1.4 Mb |
| Idioma del documento | Inglés |
CIPOS™ Micro. IM231-M6S1B / IM231-M6T2B. Static Parameters. 6.1. Inverter. Table 8. Parameter. Symbol Conditions. Min. Typ. Max. Units. 6.2
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CIPOS™ Micro IM231-M6S1B / IM231-M6T2B
Static Parameters
6 Static Parameters 6.1 Inverter
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified.
Table 8 Parameter Symbol Conditions Min. Typ. Max. Units
Collector-to-emitter VCE(sat) IC = 1A - 1.2 - V saturation voltage IC = 2A - 1.4 2.1 V IC = 2A, TJ = 150℃ - 1.5 - V Collector emitter leakage ICES VIN = 0V, V+ = 600V - - 80 µA current VIN = 0V, V+ = 600V - 24 - µA TJ = 150°C Diode forward voltage VF IC = 1A - 1.2 - V IC = 2A - 1.4 2.1 V IC = 2A, TJ = 150℃ - 1.3 - V
6.2 Control
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. The VDDUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Table 9 Parameter Symbol Min. Typ. Max. Units
Logic “1” input voltage (LIN, HIN) V IN,TH+ 2.2 - - V Logic “0” input voltage (LIN, HIN) VIN,TH- - - 0.8 V VDD/VBS supply undervoltage, positive going VDD,UV+, 9.6 10.4 11.2 V threshold VBS,UV+ VDD/VBS supply undervoltage, negative going VDD,UV-, 8.6 9.4 10.2 V threshold VBS,UV- VDD/VBS supply undervoltage lock-out VDDUVH, - 1.0 - V hysteresis VBSUVH RFE positive going threshold VRFE+ - 1.9 2.2 V RFE negative going threshold VRFE- 0.8 1.1 - V ITRIP positive going threshold VIT,TH+ 0.475 0.500 0.525 V ITRIP negative going threshold VIT,TH- - 0.430 - V ITRIP input hysteresis VIT,HYS - 0.07 - V Quiescent VBS supply current IQBS - - 70 µA Quiescent VDD supply current per channel IQDD - - 2.6 mA Input bias current VIN=5V for LIN, HIN IIN+ - 6.25 12.5 µA Input bias current VIN=5V for RFE IIN,RFE+ - - 1 µA Final Datashet 10 Revision 2.0 2019-02-11 Document Outline Description Features Potential Applications Product validation Table 1 Part Ordering Table Table of contents 1 Internal Electrical Schematic 2 Pin Configuration 3 Absolute Maximum Rating 4 Thermal Characteristics 5 Recommended Operating Conditions 6 Static Parameters 7 Dynamic Parameters 8 Thermistor Characteristics 9 Mechanical Characteristics and Ratings 10 Qualification Information 11 Diagrams & Tables 12 Application Guide 13 Package Outline 14 Revision History Disclaimer
Static Parameters
6 Static Parameters 6.1 Inverter
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified.
Table 8 Parameter Symbol Conditions Min. Typ. Max. Units
Collector-to-emitter VCE(sat) IC = 1A - 1.2 - V saturation voltage IC = 2A - 1.4 2.1 V IC = 2A, TJ = 150℃ - 1.5 - V Collector emitter leakage ICES VIN = 0V, V+ = 600V - - 80 µA current VIN = 0V, V+ = 600V - 24 - µA TJ = 150°C Diode forward voltage VF IC = 1A - 1.2 - V IC = 2A - 1.4 2.1 V IC = 2A, TJ = 150℃ - 1.3 - V
6.2 Control
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. The VDDUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Table 9 Parameter Symbol Min. Typ. Max. Units
Logic “1” input voltage (LIN, HIN) V IN,TH+ 2.2 - - V Logic “0” input voltage (LIN, HIN) VIN,TH- - - 0.8 V VDD/VBS supply undervoltage, positive going VDD,UV+, 9.6 10.4 11.2 V threshold VBS,UV+ VDD/VBS supply undervoltage, negative going VDD,UV-, 8.6 9.4 10.2 V threshold VBS,UV- VDD/VBS supply undervoltage lock-out VDDUVH, - 1.0 - V hysteresis VBSUVH RFE positive going threshold VRFE+ - 1.9 2.2 V RFE negative going threshold VRFE- 0.8 1.1 - V ITRIP positive going threshold VIT,TH+ 0.475 0.500 0.525 V ITRIP negative going threshold VIT,TH- - 0.430 - V ITRIP input hysteresis VIT,HYS - 0.07 - V Quiescent VBS supply current IQBS - - 70 µA Quiescent VDD supply current per channel IQDD - - 2.6 mA Input bias current VIN=5V for LIN, HIN IIN+ - 6.25 12.5 µA Input bias current VIN=5V for RFE IIN,RFE+ - - 1 µA Final Datashet 10 Revision 2.0 2019-02-11 Document Outline Description Features Potential Applications Product validation Table 1 Part Ordering Table Table of contents 1 Internal Electrical Schematic 2 Pin Configuration 3 Absolute Maximum Rating 4 Thermal Characteristics 5 Recommended Operating Conditions 6 Static Parameters 7 Dynamic Parameters 8 Thermistor Characteristics 9 Mechanical Characteristics and Ratings 10 Qualification Information 11 Diagrams & Tables 12 Application Guide 13 Package Outline 14 Revision History Disclaimer