Datasheet BC556B, BC557A, BC557B, BC557C, BC558B (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | PNP Bipolar Transistor |
| Páginas / Página | 7 / 2 — BC556B, BC557A, B, C, BC558B. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| Revisión | 3 |
| Formato / tamaño de archivo | PDF / 84 Kb |
| Idioma del documento | Inglés |
BC556B, BC557A, B, C, BC558B. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS
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BC556B, BC557A, B, C, BC558B ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = −2.0 mAdc, IB = 0) BC556 −65 − − BC557 −45 − − BC558 −30 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = −100 mAdc) BC556 −80 − − BC557 −50 − − BC558 −30 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = −100 mAdc, IC = 0) BC556 −5.0 − − BC557 −5.0 − − BC558 −5.0 − − Collector−Emitter Leakage Current ICES (VCES = −40 V) BC556 − −2.0 −100 nA (VCES = −20 V) BC557 − −2.0 −100 BC558 − −2.0 −100 (VCES = −20 V, TA = 125°C) BC556 − − −4.0 mA BC557 − − −4.0 BC558 − − −4.0
ON CHARACTERISTICS
DC Current Gain hFE − (IC = −10 mAdc, VCE = −5.0 V) A Series Device − 90 − B Series Devices − 150 − C Series Devices − 270 − (IC = −2.0 mAdc, VCE = −5.0 V) BC557 120 − 800 A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (IC = −100 mAdc, VCE = −5.0 V) A Series Device − 120 − B Series Devices − 180 − C Series Devices − 300 − Collector − Emitter Saturation Voltage VCE(sat) V (IC = −10 mAdc, IB = −0.5 mAdc) − −0.075 −0.3 (IC = −10 mAdc, IB = see Note 1) − −0.3 −0.6 (IC = −100 mAdc, IB = −5.0 mAdc) − −0.25 −0.65 Base − Emitter Saturation Voltage VBE(sat) V (IC = −10 mAdc, IB = −0.5 mAdc) − −0.7 − (IC = −100 mAdc, IB = −5.0 mAdc) − −1.0 − Base−Emitter On Voltage VBE(on) V (IC = −2.0 mAdc, VCE = −5.0 Vdc) −0.55 −0.62 −0.7 (IC = −10 mAdc, VCE = −5.0 Vdc) − −0.7 −0.82
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556 − 280 − BC557 − 320 − BC558 − 360 − Output Capacitance Cob − 3.0 6.0 pF (VCB = −10 V, IC = 0, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mAdc, VCE = −5.0 V, BC556 − 2.0 10 RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557 − 2.0 10 BC558 − 2.0 10 Small−Signal Current Gain hfe − (IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 125 − 900 A Series Device 125 − 260 B Series Devices 240 − 500 C Series Devices 450 − 900 1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
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(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = −2.0 mAdc, IB = 0) BC556 −65 − − BC557 −45 − − BC558 −30 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = −100 mAdc) BC556 −80 − − BC557 −50 − − BC558 −30 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = −100 mAdc, IC = 0) BC556 −5.0 − − BC557 −5.0 − − BC558 −5.0 − − Collector−Emitter Leakage Current ICES (VCES = −40 V) BC556 − −2.0 −100 nA (VCES = −20 V) BC557 − −2.0 −100 BC558 − −2.0 −100 (VCES = −20 V, TA = 125°C) BC556 − − −4.0 mA BC557 − − −4.0 BC558 − − −4.0
ON CHARACTERISTICS
DC Current Gain hFE − (IC = −10 mAdc, VCE = −5.0 V) A Series Device − 90 − B Series Devices − 150 − C Series Devices − 270 − (IC = −2.0 mAdc, VCE = −5.0 V) BC557 120 − 800 A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (IC = −100 mAdc, VCE = −5.0 V) A Series Device − 120 − B Series Devices − 180 − C Series Devices − 300 − Collector − Emitter Saturation Voltage VCE(sat) V (IC = −10 mAdc, IB = −0.5 mAdc) − −0.075 −0.3 (IC = −10 mAdc, IB = see Note 1) − −0.3 −0.6 (IC = −100 mAdc, IB = −5.0 mAdc) − −0.25 −0.65 Base − Emitter Saturation Voltage VBE(sat) V (IC = −10 mAdc, IB = −0.5 mAdc) − −0.7 − (IC = −100 mAdc, IB = −5.0 mAdc) − −1.0 − Base−Emitter On Voltage VBE(on) V (IC = −2.0 mAdc, VCE = −5.0 Vdc) −0.55 −0.62 −0.7 (IC = −10 mAdc, VCE = −5.0 Vdc) − −0.7 −0.82
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556 − 280 − BC557 − 320 − BC558 − 360 − Output Capacitance Cob − 3.0 6.0 pF (VCB = −10 V, IC = 0, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mAdc, VCE = −5.0 V, BC556 − 2.0 10 RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557 − 2.0 10 BC558 − 2.0 10 Small−Signal Current Gain hfe − (IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 125 − 900 A Series Device 125 − 260 B Series Devices 240 − 500 C Series Devices 450 − 900 1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
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