Datasheet 2N5551 / MMBT5551 (ON Semiconductor) - 4

2 N 5551 / MMBT5551 — NPN Ge Electrical Characteristics
(4) Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Test Condition Min. Max. Units Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 160 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V VCB = 120 V, IE = 0 50 nA ICBO Collector Cut-Off Current VCB = 120 V, IE = 0, TA = 100°C 50 μA IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA
On Characteristics neral-Purpose Amplifier
IC = 1.0 mA, VCE = 5.0 V 80 hFE DC Current Gain IC = 10 mA, VCE = 5.0 V 80 250 IC = 50 mA, VCE = 5.0 V 30 IC = 10 mA, IB = 1.0 mA 0.15 V VCE(sat) Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.20 V IC = 10 mA, IB = 1.0 mA 1.0 V VBE(sat) Base-Emitter On Voltage IC = 50 mA, IB = 5.0 mA 1.0 V
Small-Signal Characteristics
I f C = 10 mA, VCE = 10 V, T Current Gain Bandwidth Product 100 MHz f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 6.0 pF Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 20 pF Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 50 250 I NF Noise Figure C = 250 μA, VCE= 5.0 V, 8.0 dB RS=1.0 kΩ, f=10 Hz to 15.7 kHz
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. © 2009 Semiconductor Components Industries, LLC www.onsemi.com 2N5551 / MMBT5551 Rev. 3