Datasheet 2N5551 / MMBT5551 (ON Semiconductor) - 3

2 N 5551 / MMBT5551 — NPN Ge Absolute Maximum Ratings
(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector current - Continuous 600 mA T (2) J, Tstg Junction and Storage Temperature -55 to +150 °C
Notes: neral-Purpose Amplifier
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 3. These ratings are based on a maximum junction temperature of 150 °C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Maximum Symbol Parameter Units 2N5551 MMBT5551
Total Device Dissipation 625 350 mW PD Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W © 2009 Semiconductor Components Industries, LLC www.onsemi.com 2N5551 / MMBT5551 Rev. 2 2