Datasheet BC546B / BC547A, B, C / BC548B, C (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | NPN Bipolar Transistor |
| Páginas / Página | 6 / 4 — BC546B, BC547A, B, C, BC548B, C. BC546. Figure 7. DC Current Gain. Figure … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 110 Kb |
| Idioma del documento | Inglés |
BC546B, BC547A, B, C, BC548B, C. BC546. Figure 7. DC Current Gain. Figure 8. “On” Voltage
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BC546B, BC547A, B, C, BC548B, C BC546
1.0 TA = 25°C VCE = 5 V 0.8 TA = 25°C VBE(sat) @ IC/IB = 10 2.0 TS) 0.6 V GAIN (NORMALIZED) 1.0 BE @ VCE = 5.0 V TAGE (VOL 0.4 0.5 , VOL V 0.2 , DC CURRENT 0.2 FEh VCE(sat) @ IC/IB = 10 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain Figure 8. “On” Voltage
2.0 -1.0 TS) C) ° TA = 25°C 1.6 (mV/ -1.4 TAGE (VOL 20 mA 50 mA 100 mA 200 mA 1.2 -1.8 q COEFFICIENT VB for VBE I -55°C to 125°C 0.8 C = -2.2 OR-EMITTER VOL 10 mA TURE 0.4 -2.6 , COLLECT , TEMPERA CE VB V θ 0 -3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient
40 TA = 25°C VCE = 5 V 500 TA = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 6.0 50 C, CAP 4.0 Cob 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4
1.0 TA = 25°C VCE = 5 V 0.8 TA = 25°C VBE(sat) @ IC/IB = 10 2.0 TS) 0.6 V GAIN (NORMALIZED) 1.0 BE @ VCE = 5.0 V TAGE (VOL 0.4 0.5 , VOL V 0.2 , DC CURRENT 0.2 FEh VCE(sat) @ IC/IB = 10 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain Figure 8. “On” Voltage
2.0 -1.0 TS) C) ° TA = 25°C 1.6 (mV/ -1.4 TAGE (VOL 20 mA 50 mA 100 mA 200 mA 1.2 -1.8 q COEFFICIENT VB for VBE I -55°C to 125°C 0.8 C = -2.2 OR-EMITTER VOL 10 mA TURE 0.4 -2.6 , COLLECT , TEMPERA CE VB V θ 0 -3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient
40 TA = 25°C VCE = 5 V 500 TA = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 6.0 50 C, CAP 4.0 Cob 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4