Datasheet BC546B / BC547A, B, C / BC548B, C (ON Semiconductor)

link to page 5 BC546B, BC547A, B, C, BC548B, C Amplifier Transistors
NPN Silicon Features http://onsemi.com
• Pb−Free Packages are Available* COLLECTOR 1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE Collector - Emitter Voltage VCEO Vdc BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30
TO−92
Emitter - Base Voltage VEBO 6.0 Vdc
CASE 29
Collector Current − Continuous I
STYLE 17
C 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW 1 Derate above 25°C 5.0 mW/°C 1 2 2 3 3 Total Device Dissipation @ TC = 25°C PD 1.5 W STRAIGHT LEAD BENT LEAD Derate above 25°C 12 mW/°C TAPE & REEL Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range
THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W BC Thermal Resistance, Junction−to−Case 54xy RqJC 83.3 °C/W AYWW G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 6, 7, or 8 y = A, B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2012 − Rev. 7 BC546/D