Datasheet 7UL1G86FU (Toshiba) - 2 Fabricante Toshiba Descripción Single Exclusive-OR Gate. L-MOS LVP series Páginas / Página 8 / 2 — 7UL1G86FU. 5. IEC. Logic. Symbol. 6. Truth. Table. A. B. Y. L. L. L. L. … Formato / tamaño de archivo PDF / 154 Kb Idioma del documento Inglés
7UL1G86FU. 5. IEC. Logic. Symbol. 6. Truth. Table. A. B. Y. L. L. L. L. H. H. H. L. H. H. H. L. 7. Absolute. Maximum. Ratings. (Note). (Unless. otherwise. specified,. Ta. =. 25. )
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Línea de modelo para esta hoja de datos Versión de texto del documento 7UL1G86FU 5. IEC Logic Symbol 6. Truth Table A B Y L L L L H H H L H H H L 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.6 V Input voltage VIN -0.5 to 4.6 V DC output voltage VOUT (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCC + 0.5 Input diode current IIK -20 mA Output diode current IOK (Note 3) -20 mA DC output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND ©2018 2 2018-05-22 Toshiba Electronic Devices & Storage Corporation Rev.1.0