Datasheet STGWA50IH65DF (STMicroelectronics) - 3
| Fabricante | STMicroelectronics |
| Descripción | Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package |
| Páginas / Página | 14 / 3 — STGWA50IH65DF. Electrical ratings. Table 2: Absolute maximum ratings. … |
| Revisión | 2 |
| Formato / tamaño de archivo | PDF / 811 Kb |
| Idioma del documento | Inglés |
STGWA50IH65DF. Electrical ratings. Table 2: Absolute maximum ratings. Symbol. Parameter. Value. Unit. Notes:. Table 3: Thermal data
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STGWA50IH65DF Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 100 IC Continuous collector current at TC = 100 °C 50 A I (1) CP Pulsed collector current 150 VGE Gate-emitter voltage ± 20 V Continuous forward current at TC = 25 °C 50 IF Continuous forward current at TC = 100 °C 25 A I (1) FP Pulsed forward current 150 PTOT Total dissipation at TC = 25 °C 300 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 3: Thermal data Symbol Parameter Value Unit
Thermal resistance junction-case IGBT 0.5 RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 DocID029659 Rev 2 3/14
STGWA50IH65DF Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 100 IC Continuous collector current at TC = 100 °C 50 A I (1) CP Pulsed collector current 150 VGE Gate-emitter voltage ± 20 V Continuous forward current at TC = 25 °C 50 IF Continuous forward current at TC = 100 °C 25 A I (1) FP Pulsed forward current 150 PTOT Total dissipation at TC = 25 °C 300 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 3: Thermal data Symbol Parameter Value Unit
Thermal resistance junction-case IGBT 0.5 RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 DocID029659 Rev 2 3/14