Datasheet STGWA40IH65DF (STMicroelectronics) - 3
| Fabricante | STMicroelectronics |
| Descripción | Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package |
| Páginas / Página | 15 / 3 — STGWA40IH65DF. Electrical characteristics. Table 3. Static … |
| Revisión | 3 |
| Formato / tamaño de archivo | PDF / 351 Kb |
| Idioma del documento | Inglés |
STGWA40IH65DF. Electrical characteristics. Table 3. Static characteristics. Symbol. Parameter. Test conditions. Min. Typ. Max. Unit
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STGWA40IH65DF Electrical characteristics 2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
V Collector-emitter breakdown (BR)CES V voltage GE = 0 V, IC = 250 μA 650 V VGE = 15 V, IC = 40 A 1.50 2.00 VGE = 15 V, IC = 40 A, 1.75 V Collector-emitter saturation CE(sat) TJ = 125 °C V voltage VGE = 15 V, IC = 40 A, 1.90 TJ = 175 °C IF = 20 A 1.85 2.65 IF = 20 A, TJ = 125 °C 1.60 VF Forward on-voltage V IF = 20 A, TJ = 175 °C 1.55 IF = 40 A 2.30 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance - 2210 - Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 105 - pF Cres Reverse transfer capacitance - 63 - Qg Total gate charge VCC = 520 V, IC = 40 A, - 114 - Q V ge Gate-emitter charge GE = 0 to 15 V - 21 - nC (see Figure 23. Gate charge test Qgc Gate-collector charge circuit) - 49 -
DS11801
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Rev 3 page 3/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history
STGWA40IH65DF Electrical characteristics 2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
V Collector-emitter breakdown (BR)CES V voltage GE = 0 V, IC = 250 μA 650 V VGE = 15 V, IC = 40 A 1.50 2.00 VGE = 15 V, IC = 40 A, 1.75 V Collector-emitter saturation CE(sat) TJ = 125 °C V voltage VGE = 15 V, IC = 40 A, 1.90 TJ = 175 °C IF = 20 A 1.85 2.65 IF = 20 A, TJ = 125 °C 1.60 VF Forward on-voltage V IF = 20 A, TJ = 175 °C 1.55 IF = 40 A 2.30 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance - 2210 - Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 105 - pF Cres Reverse transfer capacitance - 63 - Qg Total gate charge VCC = 520 V, IC = 40 A, - 114 - Q V ge Gate-emitter charge GE = 0 to 15 V - 21 - nC (see Figure 23. Gate charge test Qgc Gate-collector charge circuit) - 49 -
DS11801
-
Rev 3 page 3/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history