Datasheet STGWA40IH65DF (STMicroelectronics) - 5
| Fabricante | STMicroelectronics |
| Descripción | Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package |
| Páginas / Página | 15 / 5 — STGWA40IH65DF. Electrical characteristics (curves). 2.1. Figure 1. Power … |
| Revisión | 3 |
| Formato / tamaño de archivo | PDF / 351 Kb |
| Idioma del documento | Inglés |
STGWA40IH65DF. Electrical characteristics (curves). 2.1. Figure 1. Power dissipation vs case temperature
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STGWA40IH65DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature
P IGBT100820181013PDT TOT I IGBT100820181014CCT C (W) (A) V V GE = 15 V, TJ = 175 °C GE = 15 V, TJ = 175 °C 80 240 60 160 40 80 20 0 0 -50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)
Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)
I IGBT080820181006OC25 C I IGBT080820181006OC175 C (A) V (A) GE = 15 V VGE = 15 V 11 V 11 V 100 100 13 V 13 V 80 80 9 V 9 V 60 60 40 40 20 20 7 V 7 V 0 0 0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)
Figure 6. V Figure 5. V CE(sat) vs collector current CE(sat) vs junction temperature
V IGBT100820181015VCET CE(sat) (V) V V IGBT080820181006VCEC CE(sat) GE = 15 V (V) VGE = 15 V TJ = 175 °C 3.0 2.5 IC = 80 A 2.5 TJ = 25 °C 2 IC = 40 A 2.0 1.5 1.5 I TJ = -40 °C C = 20 A 1.0 1 -50 0 50 100 150 TJ (°C) 0.50 20 40 60 80 100 IC (A)
DS11801
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Rev 3 page 5/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history
P IGBT100820181013PDT TOT I IGBT100820181014CCT C (W) (A) V V GE = 15 V, TJ = 175 °C GE = 15 V, TJ = 175 °C 80 240 60 160 40 80 20 0 0 -50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)
Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)
I IGBT080820181006OC25 C I IGBT080820181006OC175 C (A) V (A) GE = 15 V VGE = 15 V 11 V 11 V 100 100 13 V 13 V 80 80 9 V 9 V 60 60 40 40 20 20 7 V 7 V 0 0 0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)
Figure 6. V Figure 5. V CE(sat) vs collector current CE(sat) vs junction temperature
V IGBT100820181015VCET CE(sat) (V) V V IGBT080820181006VCEC CE(sat) GE = 15 V (V) VGE = 15 V TJ = 175 °C 3.0 2.5 IC = 80 A 2.5 TJ = 25 °C 2 IC = 40 A 2.0 1.5 1.5 I TJ = -40 °C C = 20 A 1.0 1 -50 0 50 100 150 TJ (°C) 0.50 20 40 60 80 100 IC (A)
DS11801
-
Rev 3 page 5/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history