Datasheet Si8935/36/37 (Silicon Labs) - 7
| Fabricante | Silicon Labs |
| Descripción | Delta-Sigma Modulator for Voltage Measurement |
| Páginas / Página | 25 / 7 — 4. Electrical Specifications. Table 4.1. Electrical Specifications. … |
| Revisión | 0.1 |
| Formato / tamaño de archivo | PDF / 471 Kb |
| Idioma del documento | Inglés |
4. Electrical Specifications. Table 4.1. Electrical Specifications. Parameter. Symbol. Test Condition. Min. Typ. Max. Units
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link to page 8 Si8935/36/37 Data Sheet Electrical Specifications
4. Electrical Specifications Table 4.1. Electrical Specifications
VDDA, VDDB = 5 V, TA = –40 to +125 °C; typical specs at 25 °C, SINC3 filter with 256 oversampling ratio and 20 MHz clock
Parameter Symbol Test Condition Min Typ Max Units
Input Side Supply VDDA 3.0 5.5 V Voltage Input Supply Current IDDA VDDA = 3.3 V 6.3 6.9 8.9 mA Output Side Supply VDDB 3.0 5.5 V Voltage Output Supply IDDB VDDB = 3.3 V 4 mA Current (Si8935) Output Supply IDDB VDDB = 3.3 V 8 mA Current (Si8936/37)
Amplifier Input
Specified Linear In- VIN 0.25 2.25 V put Range Maximum Input Voltage Before VIN 2.5 V Clipping Input Referred VOS T Offset A = 25 °C, AIP = AIN = 0 –3 ±0.6 3 mV Input Offset Drift VOST 1 µV/°C Input Impedance RIN 500 MΩ
Dynamic Characteristics
Gain 1 Gain Error TA = 25 °C –0.3 ±0.1 0.3 % Gain Error Drift ±30 ppm/°C Nonlinearity TA = 25 °C 0.02 0.05 % Nonlinearity Drift 1 ppm/°C FIN = 5 kHz Signal-to-Noise SNR 81 dB Ratio BW = 40 kHz (Si8935/37) BW = 20 kHz (Si8936) FIN = 5 kHz Total Harmonic THD –80 dB Distortion BW = 40 kHz (Si8935/37) BW = 20 kHz (Si8936) Common-Mode Transient VIN = GNDA, CMTI 50 75 kV/µs VCM = 1500 V Immunity1
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| Building a more connected world. Preliminary Rev. 0.1 | 7 Document Outline 1. Ordering Guide 2. System Overview 2.1 Modulator 3. Voltage Sense Application 4. Electrical Specifications 4.1 Regulatory Information 5. Pin Descriptions 5.1 Si8935/36/37 Pin Descriptions 6. Packaging 6.1 Package Outline: 8-Pin Wide Body Stretched SOIC 6.2 Package Outline: 8-Pin Narrow Body SOIC 6.3 Land Pattern: 8-Pin Wide Body Stretched SOIC 6.4 Land Pattern: 8-Pin Narrow Body SOIC 6.5 Top Marking: 8-Pin Wide Body Stretched SOIC 6.6 Top Marking: 8-Pin Narrow Body SOIC 7. Document Revision History
4. Electrical Specifications Table 4.1. Electrical Specifications
VDDA, VDDB = 5 V, TA = –40 to +125 °C; typical specs at 25 °C, SINC3 filter with 256 oversampling ratio and 20 MHz clock
Parameter Symbol Test Condition Min Typ Max Units
Input Side Supply VDDA 3.0 5.5 V Voltage Input Supply Current IDDA VDDA = 3.3 V 6.3 6.9 8.9 mA Output Side Supply VDDB 3.0 5.5 V Voltage Output Supply IDDB VDDB = 3.3 V 4 mA Current (Si8935) Output Supply IDDB VDDB = 3.3 V 8 mA Current (Si8936/37)
Amplifier Input
Specified Linear In- VIN 0.25 2.25 V put Range Maximum Input Voltage Before VIN 2.5 V Clipping Input Referred VOS T Offset A = 25 °C, AIP = AIN = 0 –3 ±0.6 3 mV Input Offset Drift VOST 1 µV/°C Input Impedance RIN 500 MΩ
Dynamic Characteristics
Gain 1 Gain Error TA = 25 °C –0.3 ±0.1 0.3 % Gain Error Drift ±30 ppm/°C Nonlinearity TA = 25 °C 0.02 0.05 % Nonlinearity Drift 1 ppm/°C FIN = 5 kHz Signal-to-Noise SNR 81 dB Ratio BW = 40 kHz (Si8935/37) BW = 20 kHz (Si8936) FIN = 5 kHz Total Harmonic THD –80 dB Distortion BW = 40 kHz (Si8935/37) BW = 20 kHz (Si8936) Common-Mode Transient VIN = GNDA, CMTI 50 75 kV/µs VCM = 1500 V Immunity1
silabs.com
| Building a more connected world. Preliminary Rev. 0.1 | 7 Document Outline 1. Ordering Guide 2. System Overview 2.1 Modulator 3. Voltage Sense Application 4. Electrical Specifications 4.1 Regulatory Information 5. Pin Descriptions 5.1 Si8935/36/37 Pin Descriptions 6. Packaging 6.1 Package Outline: 8-Pin Wide Body Stretched SOIC 6.2 Package Outline: 8-Pin Narrow Body SOIC 6.3 Land Pattern: 8-Pin Wide Body Stretched SOIC 6.4 Land Pattern: 8-Pin Narrow Body SOIC 6.5 Top Marking: 8-Pin Wide Body Stretched SOIC 6.6 Top Marking: 8-Pin Narrow Body SOIC 7. Document Revision History