Datasheet DGTD120T40S1PT (Diodes) - 3

DGTD120T40S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1,200 – – V IC = 1mA, VGE = 0V T – 2.00 2.40 Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 40A, VGE = 15V Tvj = 150°C – 2.45 – T – 2.40 3.00 Diode Forward Voltage vj = 25°C VF V IF = 40A Tvj = 150°C – 2.45 – Gate-Emitter Threshold Voltage VGE(th) 4.5 5.5 6.5 V VCE = VGE, IC = 1mA Zero Gate Voltage Collector Current ICES – – 1.0 mA VCE = 1200V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 341 – Gate-Emitter Charge Qge – 52 – nC VCE = 600V, IC = 40A, VGE = 15V Gate-Collector Charge Qgc – 126 – Input Capacitance Cies – 6,030 – V Reverse Transfer Capacitance Cres – 107 – pF CE = 30V, VGE = 0V, f = 1MHz Output Capacitance Coes – 206 –
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 65 – Rise time tr – 55 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 308 – IC = 40A, RG = 10Ω, Fall Time tf – 40 – Inductive Load, Turn-on Switching Energy Eon – 1.96 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.54 – mJ Total Switching Energy Ets – 2.50 – Reverse Recovery Time trr – 100 – ns IF = 40A, Reverse Recovery Current Irr – 7 – A diF/dt = 200A/µs, Reverse Recovery Charge Q T rr – 350 – nC vj = 25°C Turn-on Delay Time td(on) – 70 – Rise time tr – 62 – ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) – 325 – IC = 40A, RG = 10Ω, Fall Time tf – 62 – Inductive Load, Turn-on Switching Energy Eon – 2.35 – Tvj = 150°C Turn-off Switching Energy Eoff – 1.61 – mJ Total Switching Energy Ets – 3.96 – Reverse Recovery Time trr – 180 – ns IF = 40A, Reverse Recovery Current Irr – 10 – A diF/dt = 200A/µs, Reverse Recovery Charge Q T rr – 900 – nC vj = 150°C DGTD120T40S1PT 3 of 9 March 2018 Document Number DS39664 Rev. 1 - 2
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