Datasheet DGTD120T40S1PT (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 1200V Field Stop IGBT |
| Páginas / Página | 9 / 2 — DGTD120T40S1PT. Absolute Maximum Ratings. Characteristic. Symbol. Value. … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
DGTD120T40S1PT. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. www.diodes.com
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DGTD120T40S1PT Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 1200 V T 80 A DC Collector Current C = 25°C IC TC = 100°C 40 A Pulsed Collector Current, tp limited by Tvjmax ICM 160 A T 80 A Diode Forward Current C = 25°C IF TC = 100°C 40 A Diode Pulsed Current, tp limited by Tvjmax IFM 160 A Gate-Emitter Voltage VGES ±20 V Short Circuit Withstand Time VCC ≤ 600V, VGE = 15V, Tvj = 150°C tsc 10 µs Allowed Number of Short Circuits < 1000 Time Between Short Circuits ≥ 1.0s
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
357 Power Dissipation Linear Derating Factor (Note 6) TC = 25°C PD W TC = 100°C 142 Thermal Resistance, Junction to Ambient (Note 6) RθJA 40 Thermal Resistance, Junction to Case for IBGT (Note 6) RθJC 0.35 °C/W Thermal Resistance, Junction to Case for Diode (Note 6) RθJC 0.80 Operating Temperature Tvj -55 to +150 °C Storage Temperature Range TSTG -55 to +150 Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. DGTD120T40S1PT 2 of 9 March 2018 Document Number DS39664 Rev. 1 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 1200 V T 80 A DC Collector Current C = 25°C IC TC = 100°C 40 A Pulsed Collector Current, tp limited by Tvjmax ICM 160 A T 80 A Diode Forward Current C = 25°C IF TC = 100°C 40 A Diode Pulsed Current, tp limited by Tvjmax IFM 160 A Gate-Emitter Voltage VGES ±20 V Short Circuit Withstand Time VCC ≤ 600V, VGE = 15V, Tvj = 150°C tsc 10 µs Allowed Number of Short Circuits < 1000 Time Between Short Circuits ≥ 1.0s
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
357 Power Dissipation Linear Derating Factor (Note 6) TC = 25°C PD W TC = 100°C 142 Thermal Resistance, Junction to Ambient (Note 6) RθJA 40 Thermal Resistance, Junction to Case for IBGT (Note 6) RθJC 0.35 °C/W Thermal Resistance, Junction to Case for Diode (Note 6) RθJC 0.80 Operating Temperature Tvj -55 to +150 °C Storage Temperature Range TSTG -55 to +150 Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. DGTD120T40S1PT 2 of 9 March 2018 Document Number DS39664 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated