Datasheet IRL3705N (International Rectifier) - 6
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| Formato / tamaño de archivo | PDF / 109 Kb |
| Idioma del documento | Inglés |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
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IRL3705N 800 ) J ID m TO P 1 9A ( y 33A 15 V g BO TTOM 46 A ner 600 E he L D R IV E R V D S lanc a v 400 R G D .U .T + e A V ls - D D u IA S A P 10V le t 0 .0 1 Ω p g 200 in S
Fig 12a.
Unclamped Inductive Test Circuit , AS E V = 2 5V D D 0 A 25 50 75 100 125 150 175 Startin g J T , Jun ctio n T emp era tu re (°C) V(BR )D SS tp
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator
Fig 12b.
Unclamped Inductive Waveforms Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF 5.0 V +V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 12a.
Unclamped Inductive Test Circuit , AS E V = 2 5V D D 0 A 25 50 75 100 125 150 175 Startin g J T , Jun ctio n T emp era tu re (°C) V(BR )D SS tp
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator
Fig 12b.
Unclamped Inductive Waveforms Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF 5.0 V +V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit