Datasheet IRL3705N (International Rectifier)
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| Formato / tamaño de archivo | PDF / 109 Kb |
| Idioma del documento | Inglés |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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PD - 9.1370C IRL3705N HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.01Ω l Fast Switching G l Fully Avalanche Rated ID = 89A
Description
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A IDM Pulsed Drain Current 310 PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 46 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.90 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 8/25/97
Description
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A IDM Pulsed Drain Current 310 PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 46 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.90 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 8/25/97