Datasheet BSS138 (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Páginas / Página | 5 / 4 — B SS138. Typical Characteristics. LTAG O. (pF). TANCE. URCE. ACI. -S TE. … |
| Revisión | 3 |
| Formato / tamaño de archivo | PDF / 188 Kb |
| Idioma del documento | Inglés |
B SS138. Typical Characteristics. LTAG O. (pF). TANCE. URCE. ACI. -S TE. CAP. , G. GSV. Qg, GATE CHARGE (nC). VDS, DRAIN TO SOURCE VOLTAGE (V)
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B SS138 Typical Characteristics
10 100
)
f = 1 MHz
V
I = 220mA V = 8V D DS 25V
(
V = 0 V GS
E
8 80 30V
LTAG O (pF) V
6 60
TANCE
C
URCE
ISS
O
4 40
ACI -S TE CAP A
COSS 2 20
, G GSV
CRSS 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 10 20 30 40 50
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10 5
) W
SINGLE PULSE
(
Rθ = 350°C/W JA 100µs
ER
4 T = 25°C A
A)
1 1ms
NT (
R LIMIT
POW
DS(ON) 10ms
T
3 100ms
EN
0.1
SI
1s
N N CURRE A
DC
R
2
T
V = 10V GS
K , DRAI
0.01 SINGLE PULSE
I D
Rθ = 350oC/W 1 JA
), PEA k
T = 25oC A
p P(
0.001 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. T
1
N IE
D = 0.5 RθJA(t) = r(t) * RθJA
E
0.2
TRANS C
RθJA = 350oC/W
E N V A
0.1 0.1
CTI
0.05 P(pk)
ESIST FFE R E L
0.02 t
D A
1
E
0.01
Z M
0.01 t2
ER ALI H
TJ - TA = P * RθJA(t)
T RM
SINGLE PULSE Duty Cycle, D = t1 / t2
NO r(t),
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.
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10 100
)
f = 1 MHz
V
I = 220mA V = 8V D DS 25V
(
V = 0 V GS
E
8 80 30V
LTAG O (pF) V
6 60
TANCE
C
URCE
ISS
O
4 40
ACI -S TE CAP A
COSS 2 20
, G GSV
CRSS 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 10 20 30 40 50
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10 5
) W
SINGLE PULSE
(
Rθ = 350°C/W JA 100µs
ER
4 T = 25°C A
A)
1 1ms
NT (
R LIMIT
POW
DS(ON) 10ms
T
3 100ms
EN
0.1
SI
1s
N N CURRE A
DC
R
2
T
V = 10V GS
K , DRAI
0.01 SINGLE PULSE
I D
Rθ = 350oC/W 1 JA
), PEA k
T = 25oC A
p P(
0.001 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. T
1
N IE
D = 0.5 RθJA(t) = r(t) * RθJA
E
0.2
TRANS C
RθJA = 350oC/W
E N V A
0.1 0.1
CTI
0.05 P(pk)
ESIST FFE R E L
0.02 t
D A
1
E
0.01
Z M
0.01 t2
ER ALI H
TJ - TA = P * RθJA(t)
T RM
SINGLE PULSE Duty Cycle, D = t1 / t2
NO r(t),
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.
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