Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor) - 7

FabricanteON Semiconductor
DescripciónN-Channel Enhancement Mode Field Effect Transistor
Páginas / Página8 / 7 — 2N7000 / 2N7002 / NDS7002A — N-Chan. Typical Performance Characteristics. …
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2N7000 / 2N7002 / NDS7002A — N-Chan. Typical Performance Characteristics. Figure 13. 2N7000 Maximum

2N7000 / 2N7002 / NDS7002A — N-Chan Typical Performance Characteristics Figure 13 2N7000 Maximum

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2N7000 / 2N7002 / NDS7002A — N-Chan Typical Performance Characteristics
(Continued) XV XV /LP LW /LP LW P V 5'621 P 5'621 V P P V V P V V P 9 9 V *6 V 9 9 9 *6 V ','5$,1&855(17$ 6,1*/(38/6( ' ,'5$,1&855(17$ ' & V 6,1*/(38/6( 7 & ' $ & 7 & $ 9 9'6 '5$,16285&(92/7$*(9 9'5$,16285&(92/7$*( '6
Figure 13. 2N7000 Maximum Figure 14. 2N7002 Maximum Safe Operating Area Safe Operating Area
/LP LW XV 5'621 PV
nel Enh
P V P V 9 *6 V V 6,1*/(38/6( '& ','5$,1&855(17$ 7 &
a
$
ncement Mode Field Effect T
9 '6 '5$,16285&(92/7$*(9
Figure 15. NDS7000A Maximum Safe Operating Area
1 0.5 ' R W UW 5 TRANSIENT Q-$ Q-$ 0.2 ANCE 5Q- $= (See Datasheet) 0.1 RESIST 3SN 0.05 W W THERMAL T J - TA = P * 5Q-$ (t) 0.02 6LQJOH3XOVH D Duty Cy , cle' WW
r
r(t), NORMALIZED EFFECTIVE 0.01
ansisto
0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
1 0.5 '
r
0.2 R W Q-$ UW 5Q-$ TRANSIENT 0.1 ANCE 5Q-$= (See Datasheet) 0.05 RESIST P(pk) 0.01 t1 t 2 6LQJOH3XOVH THERMAL TJ - TA = P * 5Q-$ (t) D Duty Cy , cle' WW 0.002 r(t), NORMALIZED EFFECTIVE 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 R 1 t , TIME (sec)
Figure 1. 62711'6$7UDQVLHQW7KHUPDO5HVSRQVH&XUYH
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