Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor) - 3

2N7000 / 2N7002 / NDS7002A — N-Chan Electrical Characteristics
(Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V 2N7002 VDS = VGS, ID = 250 A 1 2.1 2.5 NDS7002A RDS(ON) Static Drain-Source VGS = 10 V, 2N7000 1.2 5 On-Resistance ID = 500 mA VGS = 10 V, 1.9 9 ID = 500 mA, TC = 125°C VGS = 4.5 V, ID = 75 mA 1.8 5.3 VGS = 10 V, 2N7002 1.2 7.5 ID = 500 mA VGS = 10 V, 1.7 13.5 ID = 500 mA, TC = 100°C VGS = 5 V,
nel Enh
1.7 7.5 ID = 50 mA VGS = 5 V, 2.4 13.5 ID = 50 mA, TC = 100°C
a
VGS = 10 V, NDS7002A
ncement Mode Field Effect T
1.2 2 ID = 500 mA VGS = 10 V, 2 3.5 ID = 500 mA, TC = 125°C VGS = 5 V, 1.7 3 ID = 50 mA VGS = 5 V, 2.8 5 ID = 50 mA, TC = 125°C VDS(ON) Drain-Source On-Voltage VGS = 10 V, 2N7000 V 0.6 2.5 ID = 500 mA VGS = 4.5 V, 0.14 0.4 ID = 75 mA VGS = 10 V, 2N7002 I 0.6 3.75 D = 500 mA
ransisto
VGS = 5.0 V, 0.09 1.5 ID = 50 mA VGS = 10 V, NDS7002A I 0.6 1 D = 500 mA
r
VGS = 5.0 V, 0.09 0.15 ID = 50 mA ID(ON) On-State Drain Current VGS = 4.5 V, 2N7000 mA 75 600 VDS = 10 V VGS = 10 V, 2N7002 500 2700 VDS  2 VDS(on) VGS = 10 V, NDS7002A 500 2700 VDS  2 VDS(on) gFS Forward VDS= 10 V, 2N7000 mS 100 320 Transconductance ID = 200 mA VDS 2VDS(ON), 2N7002 80 320 ID = 200 mA VDS 2VDS(ON), NDS7002A 80 320 ID = 200 mA www.onsemi.com 3