Datasheet IRF4905PbF (International Rectifier) - 2
| Fabricante | International Rectifier |
| Páginas / Página | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 186 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRF4905PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.02 Ω VGS = -10V, ID = -38A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 21 ––– ––– S VDS = -25V, ID = -38A ––– ––– -25 V IDSS Drain-to-Source Leakage Current µA DS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 180 ID = -38A Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 18 ––– VDD = -28V tr Rise Time ––– 99 ––– ID = -38A ns td(off) Turn-Off Delay Time ––– 61 ––– RG = 2.5Ω tf Fall Time ––– 96 ––– RD = 0.72Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 3400 ––– VGS = 0V Coss Output Capacitance ––– 1400 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– ––– -74 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G ––– ––– -260 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V trr Reverse Recovery Time ––– 89 130 ns TJ = 25°C, IF = -38A Qrr Reverse Recovery Charge ––– 230 350 nC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C Starting TJ = 25°C, L = 1.3mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -38A. (See Figure 12)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.02 Ω VGS = -10V, ID = -38A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 21 ––– ––– S VDS = -25V, ID = -38A ––– ––– -25 V IDSS Drain-to-Source Leakage Current µA DS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 180 ID = -38A Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 18 ––– VDD = -28V tr Rise Time ––– 99 ––– ID = -38A ns td(off) Turn-Off Delay Time ––– 61 ––– RG = 2.5Ω tf Fall Time ––– 96 ––– RD = 0.72Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 3400 ––– VGS = 0V Coss Output Capacitance ––– 1400 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– ––– -74 (Body Diode) showing the A ISM Pulsed Source Current integral reverse G ––– ––– -260 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V trr Reverse Recovery Time ––– 89 130 ns TJ = 25°C, IF = -38A Qrr Reverse Recovery Charge ––– 230 350 nC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C Starting TJ = 25°C, L = 1.3mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = -38A. (See Figure 12)