Datasheet IRF4905PbF (International Rectifier) - 4
| Fabricante | International Rectifier |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 186 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF4905PbF 7000 20 V = 0V, f = 1MHz GS I = -38A D C = C + C , C SHORTED iss gs gd ds ) 6000 C = C rss gd V = -44V C DS os = s C ds + C gd 16 ge (V V = -28V DS 5000 pF) C iss olta 12 4000 citance ( C oss ource V -S pa 3000 -to 8 , Ca ate C 2000 C rss , G GS 4 1000 -V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 40 80 120 160 200 DS -V , Drain-to-Source Voltage (V) G Q , Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 ) OPERATION IN THIS AREA LIMITED BY RDS(on) t (A urren ) 100 C 100 nt (A rain T = 175°C J 100µs urre T = 25°C J rse D rain C 1ms eve 10 10 D-I , D 10ms SD-I , R T = 25°C C T J = 175°C V = GS 0V Single Pulse 1 A 1 A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 SD -V , Source-to-Drain Voltage (V) -V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 ) OPERATION IN THIS AREA LIMITED BY RDS(on) t (A urren ) 100 C 100 nt (A rain T = 175°C J 100µs urre T = 25°C J rse D rain C 1ms eve 10 10 D-I , D 10ms SD-I , R T = 25°C C T J = 175°C V = GS 0V Single Pulse 1 A 1 A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 SD -V , Source-to-Drain Voltage (V) -V , Drain-to-Source Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage