Datasheet FDD4141 (ON Semiconductor) - 5

10000
ID = -12.7A 8
CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -15V 6 VDD = -20V
VDD = -10V 4 Ciss 1000
Coss 2 f = 1MHz
VGS = 0V 100
0.1 0
0 8 16 24 32 40 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
60
-ID, DRAIN CURRENT (A) 30
-IAS, AVALANCHE CURRENT(A) 40 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 50
40
VGS = -4.5V 30 VGS = -10V Limited by Package 20
10
o RθJC = 1.8 C/W 1
0.01 0.1 1 10 100 0
25 1000 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive
Switching Capability Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W) 200
100
-ID, DRAIN CURRENT (A) Crss 100us 10
THIS AREA IS
LIMITED BY rDS(on) 1ms
10ms SINGLE PULSE
TJ = MAX RATED 1 DC RθJC = 1.8oC/W
TC = 25oC 0.1
0.1 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) FOR TEMPERATURES
o
ABOVE 25SINGLE
C DERATE
PEAK
PULSE o
CURRENTRAS FOLLOWS:
= 1.8 C/W
θ JC
150 – T
C
------I = I25
125 1000 TC = 25oC 100
50
-5
10 -4 10 -3 10 -2 10 -1 10 0 10 1 2 10 10 3 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe
Operating Area ©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2 VGS = -10V Figure 12. Single Pulse Maximum
Power Dissipation 4 www.fairchildsemi.com FDD4141 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted