Datasheet FDD4141 (ON Semiconductor) - 4

4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX 80
VGS = -4.5V
VGS = -4V 60
VGS = -10V 40
VGS = -3.5V 20
VGS = -3V 0
0 1 2 3 4 3.5
3.0 VGS = -3.5V 2.5
VGS = -4V 2.0
1.5 VGS = -4.5V 1.0
VGS = -10V 0.5
0 5 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.0
0.8 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE 1.2 100 ID = -12.7A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX 45
35
25
TJ = 125oC 15
TJ = 25oC 5 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance
vs Junction Temperature Figure 4. On-Resistance vs Gate to
Source Voltage 100 100
-IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A) 80 55
ID = -12.7A
VGS = -10V 1.4 0.6
-75 40
60
-ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage 1.8
1.6 PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX VGS = -3V 80
VDS = -5V 60
40
TJ = 150oC 20
TJ = 25oC
TJ = -55oC 0
1 2 3 4 VGS = 0V 10
TJ = 150oC 1 TJ = 25oC 0.1
0.01 TJ = -55oC 1E-3
0.0 5 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2 3 1.2 www.fairchildsemi.com FDD4141 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted