Datasheet RH1814M (Analog Devices) - 3

RH1814M
TABLE 2: ELECTRICAL CHARACTERISTICS (Post-Irradiation) VS = ±5V, VCM = 0V, TA = 25°C, unless otherwise noted. 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage (Note 4) 2 2 4 4 4 mV IOS Input Offset Current 500 500 750 1000 1500 nA IB Input Bias Current ±5 ±5 ±7.5 ±10 ±15 µA Input Voltage Range Guaranteed by CMRR ±3.5 ±3.5 ±3.5 ±3.5 ±3.5 V CMRR Common Mode Rejection VCM = ±3.5V 73 73 62 62 62 dB Ratio PSRR Power Supply Rejection VS = ±2V to ±5.5V 77 75 65 65 65 dB Ratio AVOL Large-Signal Voltage Gain VO = ±3V, RL = 500Ω 1.4 1.3 1.0 0.8 0.6 V/mV VO = ±3V, RL = 100Ω 0.9 0.8 0.6 0.5 0.4 V/mV VOUT Maximum Output Voltage RL = 500Ω, 30mV Overdrive ±3.8 ±3.8 ±3.7 ±3.6 ±3.5 V Swing RL = 100Ω, 30mV Overdrive ±3.35 ±3.30 ±3.25 ±3.15 ±3.05 V IS Supply Current per Amplifier 3.6 3.6 3.6 3.6 3.6 mA 1814mfb 3 Document Outline Description Absolute Maximum Ratings Electrical Characteristics Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 2: Electrical Characteristics Table 1: Electrical Characteristics Table 2: Electrical Characteristics TABLE 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History