Datasheet RH1814M (Analog Devices) - 2

RH1814M
TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) VS = ±5V, VCM = 0V, unless otherwise noted. TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage (Note 4) 1.5 1 4 2, 3 mV ∆VOS Average Tempco of Offset (Note 5) 30 µV/°C ∆Temp Voltage IOS Input Offset Current 400 1 1000 2, 3 nA IB Input Bias Current ±4 1 ±10 2, 3 µA en Input Noise Voltage Density fO = 10kHz 8 nV/√Hz in Input Noise Current Density fO = 10kHz 1 pA/√Hz RIN Input Resistance VCM = ±3.5V 3 MΩ AVOL Large-Signal Voltage Gain VO = ±3V, RL ≥ 500Ω 1.5 4 0.7 5, 6 V/mV VO = ±3V, RL ≥ 100Ω 1 4 0.5 V/mV Input Voltage Range Guaranteed by CMRR ±3.5 ±3.5 V CMRR Common Mode Rejection VCM = ±3.5V 75 1 70 dB Ratio PSRR Power Supply Rejection VS = ±2V to ±5.5V 78 1 72 2, 3 dB Ratio Channel Separation VO = ±3V, RL = 100Ω 82 1 78 dB VOUT Output Voltage Swing RL = 500Ω, 30mV Overdrive ±3.8 4 ±3.4 5, 6 V RL = 100Ω, 30mV Overdrive ±3.35 4 ±3 5, 6 V IOUT Maximum Output Current VOUT = ±3V, 30mV Overdrive ±40 ±20 mA ISC Output Short-Circuit VOUT = 0V, 1V Overdrive ±75 ±40 mA Current (Note 3) IS Supply Current per Amplifier 3.6 1 6.5 2, 3 mA 1814mfb 2 Document Outline Description Absolute Maximum Ratings Electrical Characteristics Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 2: Electrical Characteristics Table 1: Electrical Characteristics Table 2: Electrical Characteristics TABLE 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History