Datasheet LT1167 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónSingle Resistor Gain Programmable, Precision Instrumentation Amplifier
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ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating

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LT1167
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C, RL = 2k, unless otherwise noted. LT1167AC/LT1167AC-1 LT1167C/LT1167C-1 SYMBOL PARAMETER CONDITIONS (NOTE 7) MIN TYP MAX MIN TYP MAX UNITS
PSRR Power Supply Rejection Ratio VS = ±2.3V to ±18V G = 1 l 103 115 98 115 dB G = 10 l 123 130 118 130 dB G = 100 l 127 135 124 135 dB G = 1000 l 129 145 126 145 dB IS Supply Current VS = ±2.3V to ±18V l 1.0 1.5 1.0 1.5 mA VOUT Output Voltage Swing RL = 10k VS = ±2.3V to ±5V l –VS +1.4 +VS –1.3 –VS+1.4 +VS –1.3 V VS = ±5V to ±18V l –VS +1.6 +VS –1.5 –VS+1.6 +VS –1.5 V IOUT Output Current l 16 21 16 21 mA SR Slew Rate G = 1, VOUT = ±10V l 0.65 1.1 0.65 1.1 V/μs VREF REF Voltage Range (Note 3) l –VS +1.6 +VS –1.6 –VS +1.6 +VS –1.6 V
The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, VCM = 0V, –40°C ≤ TA ≤ 85°C, RL = 2k, unless otherwise noted. LT1167AI/LT1167AI-1 LT1167I/LT1167I-1 SYMBOL PARAMETER CONDITIONS (NOTE 7) MIN TYP MAX MIN TYP MAX UNITS
Gain Error G = 1 l 0.014 0.04 0.015 0.05 % G = 10 (Note 2) l 0.130 0.40 0.140 0.42 % G = 100 (Note 2) l 0.140 0.40 0.150 0.42 % G = 1000 (Note 2) l 0.160 0.40 0.180 0.45 % GN Gain Nonlinearity (Notes 2, 4) VO = ±10V, G = 1 l 2 15 3 20 ppm VO = ±10V, G = 10 and 100 l 5 20 6 30 ppm VO = ±10V, G = 1000 l 26 70 30 100 ppm G/T Gain vs Temperature G < 1000 (Note 2) l 20 50 20 50 ppm/°C VOST Total Input Referred VOST = VOSI + VOSO/G Offset Voltage VOSI Input Offset Voltage l 20 75 25 100 μV VOSIH Input Offset Voltage Hysteresis (Notes 3, 6) 3.0 3.0 μV VOSO Output Offset Voltage l 180 500 200 600 μV VOSOH Output Offset Voltage Hysteresis (Notes 3, 6) 30 30 μV VOSI/T Input Offset Drift (Note 8) (Note 3) l 0.05 0.3 0.06 0.4 μV/°C VOSO/T Output Offset Drift (Note 3) l 0.8 5 1 6 μV/°C IOS Input Offset Current l 110 550 120 700 pA IOS/T Input Offset Current Drift l 0.3 0.3 pA/°C IB Input Bias Current l 180 600 220 800 pA IB/T Input Bias Current Drift l 0.5 0.6 pA/°C VCM Input Voltage Range VS = ±2.3V to ±5V l –VS+2.1 +VS–1.3 –VS+2.1 +VS–1.3 V VS = ±5V to ±18V l –VS+2.1 +VS–1.4 –VS+2.1 +VS–1.4 V CMRR Common Mode Rejection Ratio 1k Source Imbalance, VCM = 0V to ±10V G = 1 l 86 90 81 90 dB G = 10 l 98 105 95 105 dB G = 100 l 114 118 112 118 dB G = 1000 l 116 133 112 133 dB 1167fc 5 Document Outline FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION ORDER INFORMATION ELECTRICAL CHARACTERISTICS TYPICAL PERFORMANCE CHARACTERISTICS BLOCK DIAGRAM THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION PACKAGE DESCRIPTION REVISION HISTORY TYPICAL APPLICATION RELATED PARTS