Datasheet IRF5210SPbF, IRF5210LPbF (Infineon) - 4
| Fabricante | Infineon |
| Páginas / Página | 10 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
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| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF5210S/LPbF 100000 12.0 VGS = 0V, f = 1 MHZ I C D= -23A iss = C gs + Cgd, C ds SHORTED C ) V rss = Cgd V 10.0 ( DS= -80V C oss = Cds + Cgd e V g DS= -50V ) a F t V 10000 l DS= -20V p o ( 8.0 e V c e n c a r ti C u c iss o 6.0 a S p - a ot- C C , e 1000 oss t C a 4.0 C G rss , SGV 2.0 - 100 0.0 1 10 100 0 25 50 75 100 125 150 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA ) A LIMITED BY R ( A DS(on) t ( 100 n t e n r e r T r u J = 150°C r 100 u C C n i T e a J = 25°C c r r 10 D u o es S r - e ot 100µsec v - e ni 10 R a r , 1 D D , 1msec I S- I D- Tc = 25°C Tj = 150°C V 10msec GS = 0V Single Pulse 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000 -VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA ) A LIMITED BY R ( A DS(on) t ( 100 n t e n r e r T r u J = 150°C r 100 u C C n i T e a J = 25°C c r r 10 D u o es S r - e ot 100µsec v - e ni 10 R a r , 1 D D , 1msec I S- I D- Tc = 25°C Tj = 150°C V 10msec GS = 0V Single Pulse 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000 -VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com