Datasheet IRF5210SPbF, IRF5210LPbF (Infineon) - 3
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| Idioma del documento | Inglés |
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IRF5210S/LPbF 1000 1000 VGS VGS TOP -15V TOP -15V -10V -10V ) A -8.0V -8.0V ( A ( t -7.0V -7.0V 100 t n -6.0V 100 n -6.0V er -5.5V e -5.5V r rr u -5.0V u -5.0V C BOTTOM -4.5V C BOTTOM -4.5V ec e r cr u 10 u 10 o o S- S- ot o -4.5V - t- ni ni a -4.5V r ar D 1 D 1 , I D - D I- ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ec I n D = -38A ) at V A GS = -10V ( T si t J = 25°C s 100 n e e R r r n u T 1.5 O C J = 150°C e ) e c d c r r u e u 10 o zil o S a S - - o m o t r t - - n o n i i a N( a r 1.0 r D D 1 , ) I D n - o V ( DS = -50V S D ≤60µs PULSE WIDTH R 0.1 0.5 2 4 6 8 10 12 14 -60 -40 -20 0 20 40 60 80 100120140160180 -V T GS, Gate-to-Source Voltage (V) J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ec I n D = -38A ) at V A GS = -10V ( T si t J = 25°C s 100 n e e R r r n u T 1.5 O C J = 150°C e ) e c d c r r u e u 10 o zil o S a S - - o m o t r t - - n o n i i a N( a r 1.0 r D D 1 , ) I D n - o V ( DS = -50V S D ≤60µs PULSE WIDTH R 0.1 0.5 2 4 6 8 10 12 14 -60 -40 -20 0 20 40 60 80 100120140160180 -V T GS, Gate-to-Source Voltage (V) J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature www.irf.com 3