Datasheet LTC4006 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | 4A, High Efficiency, Standalone Li-Ion Battery Charger |
| Páginas / Página | 20 / 4 — ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over … |
| Formato / tamaño de archivo | PDF / 273 Kb |
| Idioma del documento | Inglés |
ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over the full operating
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LTC4006
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range (Note 4), otherwise specifications are at TA = 25
°
C. VDCIN = 20V, VBAT = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLN – VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLN – VTGATE) CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLN – VTGATE) ITGATE = –1µA, DCIN = 0V, CLN = 12V 100 mV VBGATE at Shutdown IBGATE = 1µA, DCIN = 0V, CLN = 12V 100 mV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Does not include tolerance of current sense resistor. may cause permanent damage to the device. Exposure to any Absolute
Note 4:
The LTC4006E is guaranteed to meet performance specifications Maximum Rating condition for extended periods may affect device from 0°C to 70°C. Specifications over the –40°C to 85°C operating reliability and lifetime. temperature range are assured by design, characterization and correlation
Note 2:
See Test Circuit with statistical process controls.
W U TYPICAL PERFOR A CE CHARACTERISTICS INFET Response Time to Reverse Current VOUT vs IOUT PWM Frequency vs Duty Cycle
0 350 Vgs OF PFET (2V/DIV) V –0.5 gs = 0 300 –1.0 250 –1.5 –2.0 Vs OF PFET (5V/DIV) 200 –2.5 150 –3.0 PROGRAMMED CURRENT = 10% –3.5 100 Vs = 0V PWM FREQUENCY (kHz) –4.0 I OUTPUT VOLTAGE ERROR (%) d (REVERSE) OF DCIN = 15V 50 PFET (5A/DIV) –4.5 DCIN = 20V DCIN = 20V VBAT = 12.6V DCIN = 24V Id = 0A 0 –5.0 1.25µs/DIV 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TEST PERFORMED ON DEMOBOARD OUTPUT CURRENT (A) DUTY CYCLE (VOUT/VIN) VIN = 15VDC LTC4006-2 4006 G02 4006 G03 CHARGER = ON INFET = 1/2 Si4925DY ICHARGE = <10mA 4006 G01 4006fa 4
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range (Note 4), otherwise specifications are at TA = 25
°
C. VDCIN = 20V, VBAT = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLN – VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLN – VTGATE) CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLN – VTGATE) ITGATE = –1µA, DCIN = 0V, CLN = 12V 100 mV VBGATE at Shutdown IBGATE = 1µA, DCIN = 0V, CLN = 12V 100 mV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Does not include tolerance of current sense resistor. may cause permanent damage to the device. Exposure to any Absolute
Note 4:
The LTC4006E is guaranteed to meet performance specifications Maximum Rating condition for extended periods may affect device from 0°C to 70°C. Specifications over the –40°C to 85°C operating reliability and lifetime. temperature range are assured by design, characterization and correlation
Note 2:
See Test Circuit with statistical process controls.
W U TYPICAL PERFOR A CE CHARACTERISTICS INFET Response Time to Reverse Current VOUT vs IOUT PWM Frequency vs Duty Cycle
0 350 Vgs OF PFET (2V/DIV) V –0.5 gs = 0 300 –1.0 250 –1.5 –2.0 Vs OF PFET (5V/DIV) 200 –2.5 150 –3.0 PROGRAMMED CURRENT = 10% –3.5 100 Vs = 0V PWM FREQUENCY (kHz) –4.0 I OUTPUT VOLTAGE ERROR (%) d (REVERSE) OF DCIN = 15V 50 PFET (5A/DIV) –4.5 DCIN = 20V DCIN = 20V VBAT = 12.6V DCIN = 24V Id = 0A 0 –5.0 1.25µs/DIV 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TEST PERFORMED ON DEMOBOARD OUTPUT CURRENT (A) DUTY CYCLE (VOUT/VIN) VIN = 15VDC LTC4006-2 4006 G02 4006 G03 CHARGER = ON INFET = 1/2 Si4925DY ICHARGE = <10mA 4006 G01 4006fa 4