Datasheet LTC4006 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | 4A, High Efficiency, Standalone Li-Ion Battery Charger |
| Páginas / Página | 20 / 3 — ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over … |
| Formato / tamaño de archivo | PDF / 273 Kb |
| Idioma del documento | Inglés |
ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over the full operating
Línea de modelo para esta hoja de datos
Versión de texto del documento
LTC4006
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range (Note 4), otherwise specifications are at TA = 25
°
C. VDCIN = 20V, VBAT = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Comparators ICMP and IREV
ITMAX Maximum Current Sense Threshold (VCSP – VBAT) VITH = 2.5V ● 140 165 200 mV ITREV Reverse Current Threshold (VCSP – VBAT) – 30 mV
Current Sense Amplifier, CA2
Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V – 40 µA Sink Current Measured at ITH, VITH = 1.4V 40 µA
Current Limit Amplifier
Transconductance 1.5 mmho VCLP Current Limit Threshold ● 93 100 107 mV ICLP CLP Input Bias Current 100 nA
Voltage Error Amplifier, EA
Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 µA OVSD Overvoltage Shutdown Threshold as a Percent ● 102 107 110 % of Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (VDCIN – VCLN) DCIN Voltage Ramping Up ● 0 0.17 0.25 V from VCLN – 0.1V Forward Regulation Voltage (VDCIN – VCLN) ● 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN – VCLN) DCIN Voltage Ramping Down ● – 60 – 25 mV INFET “On” Clamping Voltage (VDCIN – VINFET) IINFET = 1µA ● 5 5.8 6.5 V INFET “Off” Clamping Voltage (VDCIN – VINFET) IINFET = – 25µA 0.25 V
Thermistor
NTCVR Reference Voltage During Sample Time 4.5 V High Threshold VNTC Rising ● NTCVR NTCVR NTCVR V • 0.48 • 0.5 • 0.52 Low Threshold VNTC Falling ● NTCVR NTCVR NTCVR V • 0.115 • 0.125 • 0.135 Thermistor Disable Current VNTC ≤ 10V 10 µA
Indicator Outputs (ACP/SHDN, CHG)
C10TOL C/10 Indicator Accuracy Voltage Falling at PROG ● 0.375 0.400 0.425 V LBTOL LOBAT Threshold Accuracy LTC4006-6 ● 4.70 4.93 5.14 V LTC4006-2 ● 7.27 7.5 7.71 V LTC4006-4 ● 9.70 10 10.28 V RESTART Threshold Accuracy LTC4006-6 ● 7.5 7.8 7.96 V LTC4006-2 ● 11.35 11.7 11.94 V LTC4006-4 ● 15.15 15.6 15.92 V VOL Low Logic Level of ACP/SHDN, CHG IOL = 100µA ● 0.5 V VOH High Logic Level of ACP/SHDN IOH = –1µA ● 2.7 V IPO Pull-Up Current on ACP/SHDN V = 0V –10 µA IC10 C/10 Indicator Sink Current from CHG VOH = 3V ● 15 25 38 µA IOFF Off State Leakage Current of CHG VOH = 3V –1 1 µA Timer Defeat Threshold at CHG 1 V 4006fa 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range (Note 4), otherwise specifications are at TA = 25
°
C. VDCIN = 20V, VBAT = 12V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Comparators ICMP and IREV
ITMAX Maximum Current Sense Threshold (VCSP – VBAT) VITH = 2.5V ● 140 165 200 mV ITREV Reverse Current Threshold (VCSP – VBAT) – 30 mV
Current Sense Amplifier, CA2
Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V – 40 µA Sink Current Measured at ITH, VITH = 1.4V 40 µA
Current Limit Amplifier
Transconductance 1.5 mmho VCLP Current Limit Threshold ● 93 100 107 mV ICLP CLP Input Bias Current 100 nA
Voltage Error Amplifier, EA
Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 µA OVSD Overvoltage Shutdown Threshold as a Percent ● 102 107 110 % of Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (VDCIN – VCLN) DCIN Voltage Ramping Up ● 0 0.17 0.25 V from VCLN – 0.1V Forward Regulation Voltage (VDCIN – VCLN) ● 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN – VCLN) DCIN Voltage Ramping Down ● – 60 – 25 mV INFET “On” Clamping Voltage (VDCIN – VINFET) IINFET = 1µA ● 5 5.8 6.5 V INFET “Off” Clamping Voltage (VDCIN – VINFET) IINFET = – 25µA 0.25 V
Thermistor
NTCVR Reference Voltage During Sample Time 4.5 V High Threshold VNTC Rising ● NTCVR NTCVR NTCVR V • 0.48 • 0.5 • 0.52 Low Threshold VNTC Falling ● NTCVR NTCVR NTCVR V • 0.115 • 0.125 • 0.135 Thermistor Disable Current VNTC ≤ 10V 10 µA
Indicator Outputs (ACP/SHDN, CHG)
C10TOL C/10 Indicator Accuracy Voltage Falling at PROG ● 0.375 0.400 0.425 V LBTOL LOBAT Threshold Accuracy LTC4006-6 ● 4.70 4.93 5.14 V LTC4006-2 ● 7.27 7.5 7.71 V LTC4006-4 ● 9.70 10 10.28 V RESTART Threshold Accuracy LTC4006-6 ● 7.5 7.8 7.96 V LTC4006-2 ● 11.35 11.7 11.94 V LTC4006-4 ● 15.15 15.6 15.92 V VOL Low Logic Level of ACP/SHDN, CHG IOL = 100µA ● 0.5 V VOH High Logic Level of ACP/SHDN IOH = –1µA ● 2.7 V IPO Pull-Up Current on ACP/SHDN V = 0V –10 µA IC10 C/10 Indicator Sink Current from CHG VOH = 3V ● 15 25 38 µA IOFF Off State Leakage Current of CHG VOH = 3V –1 1 µA Timer Defeat Threshold at CHG 1 V 4006fa 3