Datasheet IRFZ44NPbF (Infineon) - 4
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRFZ44NPbF 2500 20 VGS = 0V, f = 1MHz ID = 25A C = C + C C SHORTED iss gs gd , ds C = C V = 44V DS rss gd V = 27V DS 2000 C = C + C oss ds gd 16 V = 11V DS tage (V) Ciss 1500 12 1000 8 C, Capacitance (pF) Coss 500 4 GSV , Gate-to-Source Vol Crss 0 0 1 10 100 0 10 20 30 40 50 60 70 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( 100 t 100 n T = 175 C e J ° rruC ecr 10 u 10 100µsec o S-ot-ni 1msec ar 1 T = 25 C D 1 J ° , I , Reverse Drain Current (A) SD I D Tc = 25°C 10msec Tj = 175°C V = 0 V GS Single Pulse 0.1 0.1 0.0 0.6 1.2 1.8 2.4 1 10 100 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( 100 t 100 n T = 175 C e J ° rruC ecr 10 u 10 100µsec o S-ot-ni 1msec ar 1 T = 25 C D 1 J ° , I , Reverse Drain Current (A) SD I D Tc = 25°C 10msec Tj = 175°C V = 0 V GS Single Pulse 0.1 0.1 0.0 0.6 1.2 1.8 2.4 1 10 100 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com