Datasheet IRFZ44NPbF (Infineon) - 3
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
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IRFZ44NPbF 1000 1000 VGS VGS TOP 15V TOP 15V 10V ) 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V urrent (A BOTTOM 4.5V 100 100 ource C 4.5V 10 rain-to-S 10 4.5V I , D D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25 C ° T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID = 49A ) 2.0 T = 25 C J ° urrent (A 100 T = 175 C J ° 1.5 ource C 1.0 (Normalized) 10 rain-to-S 0.5 I , D D (on) V = DS 25V S D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 1 0.0 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature ( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID = 49A ) 2.0 T = 25 C J ° urrent (A 100 T = 175 C J ° 1.5 ource C 1.0 (Normalized) 10 rain-to-S 0.5 I , D D (on) V = DS 25V S D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 1 0.0 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature ( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3