Datasheet Si4490DY (Vishay) - 2

Si4490DY
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 160 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 160 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta I ≥ D(on) VDS 5 V, VGS = 10 V 40 A VGS = 10 V, ID = 4.0 A 0.065 0.080 Drain-Source On-State Resistancea RDS(on) Ω VGS = 6.0 V, ID = 4.0 A 0.070 0.090 Forward Transconductancea gfs VDS = 15 V, ID = 5 A 19 S Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Qg 34 42 Gate-Source Charge Q V gs DS = 100 V, VGS = 10 V, ID = 4.0 A 7.5 nC Gate-Drain Charge Qgd 12.0 Gate Resistance Rg 0.2 0.85 1.3 Ω Turn-On Delay Time td(on) 14 20 Rise Time tr VDD = 100 V, RL = 25 Ω 20 30 I Turn-Off Delay Time td(off) D ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω 32 50 ns Fall Time tf 25 35 Source-Drain Reverse Recovery Time trr IF = 2.8 A, dI/dt = 100 A/µs 70 100 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 40 VGS = 10 V thru 6 V 35 32 30 24 25 20 ain Current (A) 16 ain Current (A) - Dr 15 - Dr I D I D TC = 125 °C 5 V 10 8 25 °C 5 4 V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
www.vishay.com Document Number: 71341 2 S09-0705-Rev. C, 27-Apr-09