Datasheet Si4490DY (Vishay)
| Fabricante | Vishay |
| Descripción | N-Channel 200-V (D-S) MOSFET |
| Páginas / Página | 7 / 1 — Si4490DY. N-Channel 200-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. … |
| Formato / tamaño de archivo | PDF / 166 Kb |
| Idioma del documento | Inglés |
Si4490DY. N-Channel 200-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V). RDS(on) (
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Si4490DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.080 at VGS = 10 V 4.0 200 • TrenchFET® Power MOSFETs 0.090 at VGS = 6.0 V 3.8 • Compliant to RoHS Directive 2002/95/EC D
SO-8
S D 1 8 S 2 7 D G S 3 6 D G 4 5 D Top View S
Ordering Information:
Si4490DY-T1-E3 (Lead (Pb)-free) Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 TA = 25 °C 4.0 2.85 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C 3.2 2.3 Pulsed Drain Current IDM 40 A Avalanch Current L = 0.1 mH IAS 15 Continuous Source Current (Diode Conduction)a IS 2.6 1.3 TA = 25 °C 3.1 1.56 Maximum Power Dissipationa PD W TA = 70 °C 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 10 s 33 40 Maximum Junction-to-Ambienta RthJA Steady State 65 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71341 www.vishay.com S09-0705-Rev. C, 27-Apr-09 1
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.080 at VGS = 10 V 4.0 200 • TrenchFET® Power MOSFETs 0.090 at VGS = 6.0 V 3.8 • Compliant to RoHS Directive 2002/95/EC D
SO-8
S D 1 8 S 2 7 D G S 3 6 D G 4 5 D Top View S
Ordering Information:
Si4490DY-T1-E3 (Lead (Pb)-free) Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 TA = 25 °C 4.0 2.85 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C 3.2 2.3 Pulsed Drain Current IDM 40 A Avalanch Current L = 0.1 mH IAS 15 Continuous Source Current (Diode Conduction)a IS 2.6 1.3 TA = 25 °C 3.1 1.56 Maximum Power Dissipationa PD W TA = 70 °C 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 10 s 33 40 Maximum Junction-to-Ambienta RthJA Steady State 65 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71341 www.vishay.com S09-0705-Rev. C, 27-Apr-09 1