Datasheet DN2625 (Microchip) - 3

FabricanteMicrochip
DescripciónN-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options
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DN2625. AC ELECTRICAL CHARACTERISTICS. Electrical Specifications:. Note 2. Parameter. Sym. Min. Typ. Max. Unit. Conditions. DIODE PARAMETER

DN2625 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: Note 2 Parameter Sym Min Typ Max Unit Conditions DIODE PARAMETER

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DN2625 AC ELECTRICAL CHARACTERISTICS Electrical Specifications:
Unless otherwise noted, TA = 25°C. (
Note 2
)
Parameter Sym. Min. Typ. Max. Unit Conditions
Forward Transconductance GFS 100 — — mmh0 VDS = 10V, ID = 150 mA Input Capacitance CISS — 800 1000 pF VGS = –2.5V, V Common Source Output Capacitance C DS = 25V, OSS — 70 210 pF f = 1 MHz Reverse Transfer Capacitance CRSS — 18 70 pF Turn-on Delay Time td(ON) — — 10 ns VDD = 25V, I Rise Time t D = 150 mA, r — — 20 ns RGEN = 3Ω, Turn-off Delay Time td(OFF) — — 10 ns VGS = 0V to –10V Fall Time tf — — 20 ns Total Gate Charge QG — — 7.04 nC ID = 3.5A, Gate-to-source Charge Q V GS — — 0.783 nC DS = 100V, V Gate-to-drain Charge Q GS = 1.5V GD — — 3.73 nC
DIODE PARAMETER
Diode Forward Voltage Drop VSD — — 1.8 V VGS = –2.5V, ISD = 150 mA (
Note 1
)
Note 1:
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS Electrical Specifications:
Unless otherwise specified, for all specifications TA = TJ = +25°C.
Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE
Operating Ambient Temperature TA –55 — 150 °C Storage Temperature TS –55 — 150 °C Soldering Temperature — — — 300 °C
Note 1 PACKAGE THERMAL RESISTANCE
TO-252 D-PAK θJA — 81 — °C/W
Note 2
8-lead DFN (Dual Pad) θJA — 29 — °C/W
Note 3 Note 1:
Distance of 1.6 mm from case for 10 seconds
2:
Four-layer, 1-oz, 3 x 4-inch PCB with 20 via for drain pad
3:
Four-layer, 1-oz, 3 x 4-inch PCB with 12 via for drain pad
THERMAL CHARACTERISTICS I ( 1) D ID I ( 1) I Package (Continuous) (Pulsed) DR DRM (A) (A) (A) (A)
TO-252 D-PAK 1.1 3.3 1.1 3.3 8-lead DFN (Dual Pad) 1.1 3.3 1.1 3.3
Note 1:
ID (Continuous) is limited by maximum TJ.  2017 Microchip Technology Inc. DS20005537B-page 3 Document Outline 1.0 Electrical Characteristics Absolute Maximum Ratings† Temperature Specifications Thermal characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transfer Characteristics. FIGURE 2-3: Saturation Characteristics. FIGURE 2-4: BVDSX Variation with Temperature. FIGURE 2-5: On-resistance vs. Drain Current. FIGURE 2-6: VGS(OFF) and RDS(ON) Variation with Temperature. FIGURE 2-7: Transconductance vs. Drain Current. 3.0 Pin Description TABLE 3-1: TO-252 D-PAK Pin Function Table TABLE 3-2: 8-lead DFN (dual Pad) Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. Product Summary 5.0 Packaging Information 5.1 Package Marking Information