Datasheet 2N4401 (ON Semiconductor) - 6

FabricanteON Semiconductor
DescripciónGeneral Purpose Transistors NPN Silicon
Páginas / Página7 / 6 — 2N4401. STATIC CHARACTERISTICS. Figure 15. DC Current Gain. Figure 16. …
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Idioma del documentoInglés

2N4401. STATIC CHARACTERISTICS. Figure 15. DC Current Gain. Figure 16. Collector Saturation Region. Figure 17. “On” Voltages

2N4401 STATIC CHARACTERISTICS Figure 15 DC Current Gain Figure 16 Collector Saturation Region Figure 17 “On” Voltages

Versión de texto del documento

2N4401 STATIC CHARACTERISTICS
3.0 VCE = 1.0 V 2.0 VCE = 10 V TJ = 125°C 1.0 25°C 0.7 0.5 -55°C 0.3 FEh , NORMALIZED CURRENT GAIN 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
TS) 1.0 (VOL TJ = 25°C 0.8 TAGE 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 CEV , COLLECTOR-EMITTER VOL 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0 +0.5 TJ = 25°C V 0.8 BE(sat) @ IC/IB = 10 0 qVC for VCE(sat) C) ° TS) -0.5 0.6 VBE @ VCE = 10 V -1.0 TAGE (VOL 0.4 VOL -1.5 COEFFICIENT (mV/ 0.2 VCE(sat) @ IC/IB = 10 -2.0 qVB for VBE 0 -2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6