Datasheet 2N4401 (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | General Purpose Transistors NPN Silicon |
| Páginas / Página | 7 / 2 — 2N4401. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 200 Kb |
| Idioma del documento | Inglés |
2N4401. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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2N4401 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 − (IC = 10 mAdc, VCE = 1.0 Vdc) 80 − (IC = 150 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 500 mAdc, VCE = 2.0 Vdc) 40 − Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) − 0.4 Vdc (IC = 500 mAdc, IB = 50 mAdc) − 0.75 Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 0.95 Vdc (I − 1.2 C = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k W Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (V t CC = 30 Vdc, VBE = 2.0 Vdc, d − 15 ns Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr − 20 ns Storage Time (V t CC = 30 Vdc, IC = 150 mAdc, s − 225 ns I Fall Time B1 = IB2 = 15 mAdc) tf − 30 ns 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION Device Package Shipping
† 2N4401 TO−92 5000 Units / Bulk 2N4401G TO−92 5000 Units / Bulk (Pb−Free) 2N4401RLRA TO−92 2000 / Tape & Reel 2N4401RLRAG TO−92 2000 / Tape & Reel (Pb−Free) 2N4401RLRMG TO−92 2000 / Tape & Ammo Box (Pb−Free) 2N4401RLRP TO−92 2000 / Tape & Ammo Box 2N4401RLRPG TO−92 2000 / Tape & Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2
2N4401 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 20 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 40 − (IC = 10 mAdc, VCE = 1.0 Vdc) 80 − (IC = 150 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 500 mAdc, VCE = 2.0 Vdc) 40 − Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) − 0.4 Vdc (IC = 500 mAdc, IB = 50 mAdc) − 0.75 Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 0.95 Vdc (I − 1.2 C = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k W Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (V t CC = 30 Vdc, VBE = 2.0 Vdc, d − 15 ns Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr − 20 ns Storage Time (V t CC = 30 Vdc, IC = 150 mAdc, s − 225 ns I Fall Time B1 = IB2 = 15 mAdc) tf − 30 ns 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION Device Package Shipping
† 2N4401 TO−92 5000 Units / Bulk 2N4401G TO−92 5000 Units / Bulk (Pb−Free) 2N4401RLRA TO−92 2000 / Tape & Reel 2N4401RLRAG TO−92 2000 / Tape & Reel (Pb−Free) 2N4401RLRMG TO−92 2000 / Tape & Ammo Box (Pb−Free) 2N4401RLRP TO−92 2000 / Tape & Ammo Box 2N4401RLRPG TO−92 2000 / Tape & Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2