Datasheet Analog Devices HMC415LP3ETR — Ficha de datos

HMC415LP3 / 415LP3E
v03.0605 GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 -5.9 GHz Typical Applications Features This amplifier is ideal for use as a power
amplifier for 4.9 -5.9 GHz applications: Gain: 20 dB
34% PAE @ Psat = +26 dBm • 802.11a WLAN 11 • HiperLAN WLAN 3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal • Access Points Supply Voltage: +3V • UNII & ISM Radios Power Down Capability LINEAR & POWER AMPLIFIERS -SMT Low External Part Count General Description Functional Diagram The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate
between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the amplifier provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control. For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3 & HMC415LP3E achieve an error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements. Electrical Specifi cations, TA = +25° C, Vs = 3V, Vpd = 3V
Parameter Min. Frequency Range Max. Min. 4.9 -5.1 Gain 18 Gain Variation Over Temperature Max. Min. 5.1 -5.4 20
0.04 Typ. 18.5
0.05 20.5
0.04 16
0.05 Typ. Max. Units 5.4 -5.9 GHz 19 dB 0.04 0.05 dB / °C Input Return Loss 10 9 8 dB Output Return Loss 10 12 8 dB 21.5
21.0 dBm 24 dBm 30 dBm Output Power for 1dB
Compression (P1dB) Icq = 285 mA …