Datasheet HMC415LP3, 415LP3E (Analog Devices)

FabricanteAnalog Devices
DescripciónGaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
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HMC415LP3 / 415LP3E. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 4.9 - 5.9 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC415LP3, 415LP3E Analog Devices

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HMC415LP3 / 415LP3E
v03.0605
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features
This amplifi er is ideal for use as a power Gain: 20 dB amplifi er for 4.9 - 5.9 GHz applications: 34% PAE @ Psat = +26 dBm • 802.11a WLAN 3.7% EVM @ Pout = +15 dBm • HiperLAN WLAN with 54 Mbps OFDM Signal • Access Points Supply Voltage: +3V 11 • UNII & ISM Radios Power Down Capability Low External Part Count T
Functional Diagram General Description
The HMC415LP3 & HMC415LP3E are high effi- ciency GaAs InGaP Heterojunction Bipolar Tran- - SM sistor (HBT) MMIC Power amplifi ers which operate S between 4.9 and 5.9 GHz. The amplifi er is pack- R aged in a low cost, leadless surface mount pack- IE age with an exposed base for improved RF and IF thermal performance. With a minimum of external L components, the amplifi er provides 20 dB of gain, P +26 dBm of saturated power, and 34% PAE from a M +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 R A dBm OFDM output power (64 QAM, 54 Mbps), the E HMC415LP3 & HMC415LP3E achieve an error W vector magnitude (EVM) of 3.7% meeting 802.11a O linearity requirements.
Electrical Specifi cations, T = +25° C, Vs = 3V, Vpd = 3V
& P
A
R Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units A Frequency Range 4.9 - 5.1 5.1 - 5.4 5.4 - 5.9 GHz E Gain 18 20 18.5 20.5 16 19 dB IN Gain Variation Over Temperature 0.04 0.05 0.04 0.05 0.04 0.05 dB /
°
C L Input Return Loss 10 9 8 dB Output Return Loss 10 12 8 dB Output Power for 1dB Icq = 285 mA 20 22.5 20.5 23.0 18 21.5 dBm Compression (P1dB) Icq = 200 mA 22.0 22.5 21.0 Saturated Output Power (Psat) 25.5 26 24 dBm Output Third Order Intercept (IP3) 28 31 29 32 27 30 dBm Error Vector Magnitude Icq = 200 mA 3.7 % (54 Mbps OFDM Signal @ +15 dBm Pout) Noise Figure 6 6 6 dB 0.002 / 0.002 / 0.002 / Supply Current (Icq) Vpd = 0V/3V mA 285 285 285 Control Current (Ipd) Vpd = 3V 7 7 7 mA Switching Speed tOn, tOff 45 45 45 ns Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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