Datasheet Infineon IR2011S — Ficha de datos

IR2011(S)PBF High and Low Side Driver
Features Product Summary Floating channel designed for bootstrap operation
Fully operational to 200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 to 20V
Independent low and high side channels
Input logic HIN/LIN active high
Undervoltage lockout for both channels
3.3V and 5V logic compatible
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels VOFFSET (max) 200V IO+/-(typ) 1.0A / 1.0A VOUT 10 – 20V ton/off (typ) 80ns & 60ns Delay Matching (max) 20ns Description
The IR2011 is a high power, high speed power MOSFET
driver with independent high and low side referenced output
channels. Logic inputs are compatible with standard CMOS
or LSTTL output, down to 3.0V logic. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power
MOSFET in the high side configuration which operates up to
200 volts. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic construction. Package Options 8-Lead PDIP 8-Lead SOIC Applications Converters
DC motor drive Ordering Information …