Datasheet IR2011(S)PBF (Infineon)

FabricanteInfineon
DescripciónHigh and Low Side Driver
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Revisión01_00
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IR2011(S)PBF. High and Low Side Driver. Features. Product Summary. Description. Package Options. Applications. Ordering Information

Datasheet IR2011(S)PBF Infineon, Revisión: 01_00

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IR2011(S)PBF High and Low Side Driver Features Product Summary
Floating channel designed for bootstrap operation Fully operational to 200V VOFFSET (max) 200V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 to 20V IO+/- (typ) 1.0A / 1.0A Independent low and high side channels Input logic HIN/LIN active high VOUT 10 – 20V Undervoltage lockout for both channels 3.3V and 5V logic compatible ton/off (typ) 80ns & 60ns CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Delay Matching (max) 20ns
Description
The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output
Package Options
channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. 8-Lead PDIP 8-Lead SOIC
Applications
Converters DC motor drive
Ordering Information Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity
IR2011PBF PDIP8 Tube 50 IR2011PBF IR2011SPBF SO8N Tube 95 IR2011SPBF IR2011SPBF SO8N Tape and Reel 2500 IR2011STRPBF 1 www.irf.com © 2015 International Rectifier April 14, 2015