Datasheet ON Semiconductor BC558BRL1G — Ficha de datos

BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
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COLLECTOR
1 MAXIMUM RATINGS
Rating Symbol Collector -Emitter Voltage Value VCEO
BC556
BC557
BC558 Collector -Base Voltage Vdc VCBO Vdc
−80
−50
−30 VEBO −5.0 Vdc Collector Current − Continuous
Collector Current − Peak IC
ICM −100
−200 mAdc Base Current − Peak IBM −200 mAdc Total Device Dissipation @ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Device Dissipation @ TC = 25°C
Derate above 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction …