NXP SemiconductorsProduct specificationN-channel junction FETBF862FEATURESPINNING SOT23 High transition frequency for excellent sensitivity in PINDESCRIPTION AM car radios 1 source High transfer admittance. 2 drain 3 gate APPLICATIONS Pre-amplifiers in AM car radios. handbook, halfpage 2 1 DESCRIPTION Silicon N-channel symmetrical junction field-effect d g transistor in a SOT23 package. Drain and source are s interchangeable. 3 Top view MAM036 Marking code : 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATASYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT VDS drain-source voltage 20 V VGSoff gate-source cut-off voltage 0.3 0.8 1.2 V IDSS drain-source current 10 25 mA P tot total power dissipation Ts 90 C 300 mW y fs transfer admittance 35 45 mS Tj junction temperature 150 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers