Datasheet Si7611DN (Vishay) - 5

FabricanteVishay
DescripciónP-Channel 40-V (D-S) MOSFET
Páginas / Página13 / 5 — New Product. Si7611DN. TYPICAL CHARACTERISTICS. Current Derating*. Power, …
Formato / tamaño de archivoPDF / 579 Kb
Idioma del documentoInglés

New Product. Si7611DN. TYPICAL CHARACTERISTICS. Current Derating*. Power, Junction-to-Case. Power, Junction-to-Ambient

New Product Si7611DN TYPICAL CHARACTERISTICS Current Derating* Power, Junction-to-Case Power, Junction-to-Ambient

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New Product Si7611DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 36 27 (A) Package Limited rrent u C 18 Drain - I D 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
50 2.0 40 1.5 ) 30 (W (W er er 1.0 w w Po 20 Po 0.5 10 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C)
Power, Junction-to-Case Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 5