Datasheet BSC093N04LS G - 6
| Descripción | OptiMOS 3 Power-Transistor |
| Páginas / Página | 10 / 6 — BSC093N04LS G. 9 Drain-source on-state resistance. 10 Typ. gate threshold … |
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| Idioma del documento | Inglés |
BSC093N04LS G. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 2.5. 1.5. [V]. 0.5. -60. -20. 100. 140. 180. [°C]
Versión de texto del documento
BSC093N04LS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=14 µA
16 2.5 2 12
98 %
]
W
1.5 [m [V] ) ) n 8 h
typ
t o ( ( S DS G R V 1 4 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 1000
Ciss
103
Coss 150 °C, 98%
100
25 °C
] ] 102 [pF [A C I F
150 °C 25 °C, 98% Crss
10 101 100 1 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 V [V] V [V] DS SD
Rev. 2.1 page 6 2013-05-21
R DS(on)=f(T j); I D=40 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=14 µA
16 2.5 2 12
98 %
]
W
1.5 [m [V] ) ) n 8 h
typ
t o ( ( S DS G R V 1 4 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 1000
Ciss
103
Coss 150 °C, 98%
100
25 °C
] ] 102 [pF [A C I F
150 °C 25 °C, 98% Crss
10 101 100 1 0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 V [V] V [V] DS SD
Rev. 2.1 page 6 2013-05-21