Datasheet BSC093N04LS G - 2

BSC093N04LS G Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Power dissipation P tot T C=25 °C 35 W T A=25 °C, 2.5 R thJA=50 K/W2) Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics
Thermal resistance, junction - case R thJC bottom - - 3.6 K/W top 20 Device on PCB R thJA 6 cm2 cooling area2) - - 50
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=14 µA 1.2 - 2 V DS=40 V, V GS=0 V, Zero gate voltage drain current I DSS - 0.1 1 µA T j=25 °C V DS=40 V, V GS=0 V, - 10 100 T j=125 °C Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 11.0 13.7 mW V GS=10 V, I D=40 A - 7.8 9.3 Gate resistance R G - 1 - W |V DS|>2|I D|R DS(on)max, Transconductance g fs 34 67 - S I D=40 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.1 page 2 2013-05-21