Datasheet NTD4815NH (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK |
| Páginas / Página | 8 / 4 — NTD4815NH. TYPICAL PERFORMANCE CURVES. Figure 1. On- Region … |
| Formato / tamaño de archivo | PDF / 297 Kb |
| Idioma del documento | Inglés |
NTD4815NH. TYPICAL PERFORMANCE CURVES. Figure 1. On- Region Characteristics. Figure 2. Transfer Characteristics
Versión de texto del documento
NTD4815NH TYPICAL PERFORMANCE CURVES
80 60 10 V TJ = 25°C VDS ≥ 10 V 70 8 V 6 V 50 60 (AMPS) (AMPS) 40 50 5 V 40 30 4.5 V CURRENT CURRENT 30 4.2 V 4 V 20 TJ = 125°C 20 ,DRAIN 3.8 V ,DRAIN I D I D T 10 J = 25°C 10 3.5 V 3.2 V T 0 J = - 55°C 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS, DRAIN- TO- SOURCE VOLTAGE (VOLTS) VGS, GATE- TO- SOURCE VOLTAGE (VOLTS)
Figure 1. On- Region Characteristics Figure 2. Transfer Characteristics
) (Ω (Ω 0.04 0.05 ANCE T ID = 30 A ANCE J = 25°C TJ = 25°C 0.04 0.03 RESIST RESIST V 0.03 GS = 4.5 V 0.02 -SOURCE -SOURCE 0.02 -TO -TO 0.01 0.01 VGS = 11.5 V ,DRAIN ,DRAIN (on) 0 (on) 0 DS 2 3 4 5 6 7 8 9 10 11 12 DS 10 20 30 40 50 60 70 R 80 R VGS, GATE- TO- SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On- Resistance vs. Gate- to- Source Figure 4. On- Resistance vs. Drain Current and Voltage Gate Voltage
1.8 10,000 V ANCE GS = 0 V ID = 30 A 1.6 VGS = 10 V RESIST 1.4 (nA) TJ = 150°C 1.2 1000 -SOURCE MALIZED)R ,LEAKAGE -TO 1.0 S (NO I DS 0.8 TJ = 100°C ,DRAIN (on) 0.6 100 DSR - 50 - 25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN- TO- SOURCE VOLTAGE (VOLTS)
Figure 5. On- Resistance Variation with Figure 6. Drain- to- Source Leakage Current Temperature vs. Drain Voltage http://onsemi.com 4
80 60 10 V TJ = 25°C VDS ≥ 10 V 70 8 V 6 V 50 60 (AMPS) (AMPS) 40 50 5 V 40 30 4.5 V CURRENT CURRENT 30 4.2 V 4 V 20 TJ = 125°C 20 ,DRAIN 3.8 V ,DRAIN I D I D T 10 J = 25°C 10 3.5 V 3.2 V T 0 J = - 55°C 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS, DRAIN- TO- SOURCE VOLTAGE (VOLTS) VGS, GATE- TO- SOURCE VOLTAGE (VOLTS)
Figure 1. On- Region Characteristics Figure 2. Transfer Characteristics
) (Ω (Ω 0.04 0.05 ANCE T ID = 30 A ANCE J = 25°C TJ = 25°C 0.04 0.03 RESIST RESIST V 0.03 GS = 4.5 V 0.02 -SOURCE -SOURCE 0.02 -TO -TO 0.01 0.01 VGS = 11.5 V ,DRAIN ,DRAIN (on) 0 (on) 0 DS 2 3 4 5 6 7 8 9 10 11 12 DS 10 20 30 40 50 60 70 R 80 R VGS, GATE- TO- SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On- Resistance vs. Gate- to- Source Figure 4. On- Resistance vs. Drain Current and Voltage Gate Voltage
1.8 10,000 V ANCE GS = 0 V ID = 30 A 1.6 VGS = 10 V RESIST 1.4 (nA) TJ = 150°C 1.2 1000 -SOURCE MALIZED)R ,LEAKAGE -TO 1.0 S (NO I DS 0.8 TJ = 100°C ,DRAIN (on) 0.6 100 DSR - 50 - 25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN- TO- SOURCE VOLTAGE (VOLTS)
Figure 5. On- Resistance Variation with Figure 6. Drain- to- Source Leakage Current Temperature vs. Drain Voltage http://onsemi.com 4