Datasheet BF998, BF998R - 7

NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R MGC466 MGC467 10 10 3 10 3 y is y rs ϕ rs (mS) (μS) (deg) b is ϕ 1 rs 10 2 10 2 yrs 10 1 10 10 g is 10 2 1 1 102 10 10 3 f (MHz) 102 10 10 3 f (MHz) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C. VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C. Fig.13 Input admittance as a function of the Fig.14 Reverse transfer admittance and phase as a frequency; typical values. function of frequency; typical values. MGC468 MGC469 10 2 10 2 10 yos y ϕ fs b fs (mS) os (mS) y fs (deg) 1 10 10 ϕ fs gos 10 1 1 1 10 2 102 10 10 3 f (MHz) 102 10 10 3 f (MHz) VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C. VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C. Fig.15 Forward transfer admittance and phase as a Fig.16 Output admittance as a function of the function of frequency; typical values. frequency; typical values. 1996 Aug 01 7 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers