Datasheet BAV99 (NXP) - 4

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NXP Semiconductors BAV99 series High-speed switching diodes 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1][2] junction to ambient BAV99 - - 500 K/W BAV99W - - 625 K/W Rth(j-sp) thermal resistance from junction to solder point BAV99 - - 360 K/W BAV99S [3] - - 260 K/W BAV99W - - 300 K/W [1] Single diode loaded. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Soldering points at pins 2, 3, 5 and 6.
7. Characteristics Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Per diode
VF forward voltage IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V IR reverse current VR = 25 V - - 30 nA VR = 80 V - - 0.5 μA VR = 25 V; Tj = 150 °C - - 30 μA VR = 80 V; Tj = 150 °C - - 50 μA Cd diode capacitance f = 1 MHz; VR = 0 V - - 1.5 pF trr reverse recovery time [1] - - 4 ns VFR forward recovery voltage [2] - - 1.75 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [2] When switched from IF = 10 mA; tr = 20 ns. BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 4 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents